蒋最敏教授

1.简历

1982 中国科学技术大学学士
1985 中国科学技术大学硕士
1988 中国科学技术大学博士

1993.10 复旦大学博士后
1996.5 复旦大学副教授
1998.5 复旦大学教授
1999.7 复旦大学博士生导师

2.国外工作经历

1989年3月－1990年9月

意大利PARMA大学(国际理论物理中心资助) 访问学者

1990年9月－1993年6月

法国马赛三大，法国科研中心 邀请一级讲师，邀请研究人员

2000年8月－2001年2月

美国加州大学洛杉矶分校 访问学者

2001年7月－2002年1月

美国加州大学洛杉矶分校 访问学者

3. 学术兼职

中国物理学会同步辐射专业委员会常务委员
中国物理学会物理教学委员会委员
中国物理学会半导体专业委员会委员
中国物理学会X射线衍射专业委员会委员
北京正负电子对撞国家实验室学术委员会委员
上海物理学会理事
北京同步辐射用户委员会主任
《科学通报》编委
《真空科学与技术学报》编委
《真空电子技术》编委

4.荣誉

1999年 获上海市优秀青年教师称号
2004年 获国家自然科学杰出青年基金
2005年 获全国优秀博士后称号
2007年 入选新世纪百千万人才工程国家级人选名单
2009年 复旦大学教学名师

5.教学经历

1997年秋季 固体物理 材料电子物理专业
1998年春季 电磁学 材料系、电光源系
1998年秋季 凝聚态物理 物理系研究生
2002年春季 普通物理（下） 电子工程系
2002年秋季 大学物理（上） 化学系
2003年春季 大学物理（上） 数学系
2003年秋季 大学物理（上） 数学系
2004年春季 大学物理（下） 物理系、理科基地班
2005年春季 大学物理（下） 物理系、数学系基地班
2006年春季 大学物理（下） 物理系
2007年秋季 普通物理A（上） 八年制医科
2008年秋季 普通物理A（上） 八年制医科
2009年秋季 大学物理（上） 物理系
2010年秋季 普通物理A（上） 八年制医科

6. 学科领域与研究方向

学科领域：凝聚态物理

研究方向：硅分子束外延

硅基低维材料制备、物理特性和器件应用

7. 研究成果

在国际刊物上发表论文近120多篇，
被他人引用约1000次。
在国际学术会议上作报告40 多篇。

8. 获奖情况

1989年获中科院自然科学奖二等奖（第五完成人）

2001年获上海市科技进步一等奖（第二完成人）

2002年获国家自然科学二等奖（第二完成人）

9. 发表文章或著作

1. Z. Jiang, X. Jiang, W. Liu and Z. Wu
*Thermal stability of multilayer films Pt/Si, W/Si, Mo/Si and W/C
J. Appl. Phys. 65, 196(1989)
2. Z. Jiang, C. Gao and Z. Wu
X-ray diffraction of superlattice with fluctuation and systematic deviation of period
Proceeding of 12th International Congress on X-ray Optics and Microanalysis, 28 Aug.-1 Sept., 1989, Cracow, Poland, page 123(1989)
3. C. Gao, Z. Jiang, and Z. Wu
X-ray diffraction of multilayers with a systematic deviation of period
J. Appl. Phys. 68, 874(1990)
4. P. Fontana, P. Podini, Z. Jiang and W. Liu
*Temperature dependence of resistivity in Cu/Ti superlattice
Phys. Rev. B 42, 5859(1990)
5. M.P. Fontana, G. Antonioli, Z. Jiang and A.S. Angeloni
Raman scattering in polymer liquid crystals
Mol. Cryst. Liq. Cryst. 207, 151(1991)
6. J. M. Broto, A. Sdaq, A. Audouard, J.C. Ousset, H. Rakoto, S. Askenazy, B. Vidal and
Z. Jiang
High field magnetoresistance of sputtered W/C multilayers
Physica B 177, 421(1992)
7. M. Maaza, Z. Jiang, F. Samuel, B. Farnoux and B. Vidal
Improvement of neutron refectivity of an Ni-Ti multilayer by hyhrogenation of titanium layer
J. Appl. Crystallogr. 25, pt 6, 789(1992)
8. Z. Jiang, V. Dupuis, B. Vidal, M. Piecuch and M.F. Ravet
*Improvement of thermal stability of W/C multilayers
J. Appl. Phys. 72, 931(1992)
9. B. Vidal, Z. Jiang and F. Samuel
Reflectivity improvement for neutron mirrors and supermirrors
Proceeding of SPIE, Neutron optical devices and application, 19-24 July 1992, San Diego, USA, Vol.1738, page 30(1992)
10. Z. Jiang, B. Vidal, M. Brunel, M. Maaza and F. Samuel
Characterization of neutron mirrors and supermirrors using X-ray and neutron measurement
Proceeding of SPIE, Neutron optical device and application, 19-24 July 1992, San Diego, USA, Vol.1738, page 141(1992)
11. Z. Jiang, B. Vidal, G. Desrousseaux, V. Dupuis, M. Piecuch and M. F. Ravet
Graphitization of carbon in multilayers W/C
Proceeding of XIII the internatinal conference on Raman spectroscopy, 31 August-4 September 1992, Wurzburge Germany, Page 996 (1992)
12. A. Sdaq, J. M. Broto, H. Rakoto, J. C. Ousset, B. Raquet, B. Vidal and Z. Jiang, J.F. Bobo, M. Piecuch and B. Baylac
Magnetic and transport properties of Ni/Ti and Co/Cu multilayer at high fields
J. Magn. Magn. Mater.121, 409(1993)
13. Z. Jiang, B. Vidal, G. Desrousseaux, V. Dupuis, M. Piecuch and M. F. Ravet
Raman scattering from carbon in tungsten/carbon multilayer films
J. Appl. Phys.74, 249 (1993)
14. G. Desrousseaux, A. Carlan, Z. Jiang
Sticking coefficent variation during condesations of silcon and glod on films
J. Phys. II, At. Mol. Cluster. Phys. Chem. Phys. Mech.Hydrodyn. 3,1461(1993)
15. Y.Yang, X.L. Lu, D. Huang, X.J. Chen, Z. Jiang, Y. Fan, D. Gong, G. Zhao, and X. Wang
Photoluminesence from strained SiGe/Si quantum well structure grown by Si molecular beam epitaxy
SPIE 2364, page 412-416(1994)
16. X.J. Chen, Q.H. Wang, D.W. Dong, Y. Yang, H.Q. Lu, Fang Lu, Y.L. Yan, X.K. Lu, Z.M. Jiang, X.J. Zhang, and Xun Wang
Growth and characterization of boron delta function shaped doping layer in silicon molecular beam epitaxy
SPIE 2364, page 109-113(1994)
17. M.J. Casanove, E. Snoech, C. Roucau, J.L. Hutchison, Z. Jiang, B. Vidal
Fine structure of sputtered Ni/Ti multilayered thin films studied by HREM
MRS Symp. Proc. 343, 277(1994)
18. Liwen Wu, Zuimin Jiang, Wenhan Liu, Shuyuan Zhang, Ziqin Wu
Observation of systematic deviations of period in W/Si and W/C multilayers
J. Appl. Phys. 78 , 5331(1995)
19. Xuekun Lu, Zuimin Jiang, Haijun Zhu, Xiangjiu Zhang, and Xun Wang
*Observation of boron doping induced Surface roughening in Silicon molecular beam epitaxy
Appl. Phys. Lett. 68, 3278 (1996)
20. Xuekun Lu, Zuimin Jiang, Kaifeng Liu, Haijun Zhu, Xiangjiu Zhang, Xun Wang
Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy
J. Cryst. Growth 169, 665(1996)
21. Xuekun Lu, Zuimin Jiang, Damin Huang, Haijun Zhu, Xiangjiu Zhang, and Xun Wang
Crystalline quality of Si epilayers influenced by Sb doping
J. Cryst.Growth 158, 169(1996)
22. X.H. Liu, D.M. Huang, Z.M. Jiang, and Xun Wang
Interface broadening and Raman scattering in SiGe/Si superlattice
Phys. Rev. B 53,4699(1996)
23. Xiaohan Liu，Daming Huang，Zuimin Jiang，Xuekun Lu，Xiangjiu Zhang and Xun Wang
Photoluminescence from trapped excitons in Si1-xGex / Si quantum well structures
J. Phys.: Condens. Matter 8,3947(1996)
24. Xiu Lisong, Jiang Xiaoming, Zheng Wenli, Lu Xuekun, Jiang Zuimin, Zhang Xiangjiu, and Wang Xun
Synchrotron radiation study on structure of Sb ?-doped Si
Chinese Science Bulletin 41, 559(1996)
25. Haijun Zhu, Zuimin Jiang, Amei Xu, Mingchun Mao, Dongzhi Hu, Xiangjiu Zhang, Xiaohan Liu, Daming Huang, Xun Wang, Jielin Sun, Minqian Li, Xiaoming Jiang
Surfactant influence on the Ge heteroepilayer on Si(001) studied by X-ray diffraction and atomic force microscopy
J. Cryst. Growth 179,115(1997)
26. Jiang Zuimin, Xiu Lisong, Jiang Xiaoming, Zheng Wenli, Lu Xuekun, Zhu Haijun, Zhang Xiangjiu, Wang Xun
Extremely narrow Sb Delta-doped Epitaxial layer Characterized by X-ray reflectivity
Chin. Phys. Lett. 14, 686 (1997)
27. Xun Wang, Zuimin Jiang, Haijun Zhu, Fang Lu, Daming Huang, Xiaohan Liu, Changwu Hu, Yifan Chen, Ziqiang Zhu and Takafumi Yao
*Germanium dots with highly uniform size distribution growtn on the Si(001) substrate by molecular beam epitaxy
Appl. Phys. Lett. 71, 3543 (1997)
28. Zuimin Jiang, H.J. Zhu, F. Lu, D.M. Huang, Xun Wang, Y.F, Chen, Z.Q. Zhu and Takafumi
A silicon-based low dimensional quantum structure-self assembly grown Ge quantum dots
Nonlinear Optics 18, 73(1997)
29. J.M. Broto, J.C. Ousset, H. Rakoto, B. Vidal, Z. Jiang, A. Sdaq, A. Khmou
Transport-properties of sputtered W/C multilayers in high fields
J. Appl. Phys. 81, 1820(1997)
30. Zhu Haijun, Jiang Zuimin, Xu Amei, Mao Mingchun, Hu Dongzhi, Liu Xiaohan, Huang Daming, Lu Fang, Hu Changwu, and Kasuya Atsuo
Self-organized Ge quantum dots and its photoluminescence properties
Progress in Natural Science 8, 113(1998)
31. Zuimin Jiang, Amei Xu, Haijun Zhu, Xiaohan Liu, Dongzhi Hu, Xingjun Wang, Mingchun Mao, Xiangjiu Zhang, Jihuang Hu, Daming Huang, Xun Wang
*Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate
Thin Solid Films 321, 116(1998)
32. Z.M. Jiang, Xun Wang, H.J. Zhu, F. Lu, D.M. Huang, Y.F. Chen, Z.Q. Zhu and T.Yao
*Self-organized Ge quantum dots grown by MBE on Si(001)
Thin Solid Films 321, 60(1998)
33. H.J. Zhu, Z.M. Jiang, F.Lu, and Xun Wang
Self-organized Germaniu quantum dots grown by molecular beam epitaxy on silicon
Proc. of 8th Intern. Conf. on Narrow Gap Semiconductors, page 436(1998)
34. S.K. Zhang, H.J. Zhu, F. Lu, Z.M. Jiang, and Xun Wang
*Coulomb charging effect in a self-assembled Ge quantum dots studied by Admittance spectroscopy
Phys. Rev. Lett. 80,3340(1998)
35. Baojun Li, Guozheng Li, Enke Liu, Zuimin Jiang, Jie Qin, and Xun Wang
Monolithic integration of GeSi/Si modulator and multiple quantum well photodetector for 1.55um operation
Appl. Phys. Lett. 73,3504(1998)
36. Z.M. Jiang, C.W. Pei, L.S. Liao, X.F. Zhou, X.J. Zhang, Xun Wang
Q.J. Jia, X.M. Jiang, Z.H. Ma, Terry Simith, I.K. Sou
Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy
Thin Solid Films 336, 236(1998)
37. S.K. Zhang, Z.M. Jiang, J. Qin, D.Z. Hu, F. Lu, X. Wang
Well depth fluctuation of Si1-xGex/Si quantum well structures studied by conductance-voltage technique
J. Appl. Phys. 83, 5587(1998)
38. Q.J. Jia, W.L. Zheng, Z.G. Wang, X.M. Jiang, Z.M. Jiang, C.W. Pei, J. Qin, D.Z.Hu
The distribution of Sb atoms in delta-doped silicon crystal
Acta Physica Sinica (Overseas Edition) 7,695 (1998)
39. S.K. Zhang, Z.M. Jiang, H.J. Zhu, F. Lu
Measurements of confined energy levels and Coulomb charging effect in self-assembled Ge quantum dots by admittance spectroscopy
MRS Symp. Proc.533 , 191(1998)
40. Baojun Li, Guozheng Li, Enke Liu, Zuimin Jiang , Jie Qin, and Xun Wang
Low loss 1x2 multimode interference wavelength demultiplexer in silicon-germanium alloy
IEEE Photonics Technol. Lett. 11, 575 (1999)
41. Baojun Li, Zuimin Jiang, Chengwen Pei, Jie Qin, Xun Wang, Guozheng Li, Jianjun Wan, and Enke Liu
*Integration of wavelength signal divider and infrared photodetectors based on plasma dispersion effect in SiGe/Si
Appl. Phy. Lett. 74, 1663 (1999)
42. Baojun Li, Zuimin Jiang, Xiangjiu Zhang, Xun Wang
*SiGe/Si Mach-Zehnder interferometer modulator based on plasma dispersion effect
Appl. Phy. Lett. 74, 2108 (1999)
43. Jun Wan, Z.M. Jiang, D.W. Gong, Y.L. Fan, C. Sheng and Xun Wang, Q.J.Jia , W.Zheng, X.M.Jiang
X-ray reflectivity measurement of delta-doped erbium profile in silicon MBE layer
Phys. Rev. B 59, 10697(1999)
44. Z.H. Xiong, S. Yuan, Z.M. Jiang, J. Qin, L.S. Liao, X.M. Ding, X.Y. Hou, Xun Wang
Photoluminescence studies of porous silicon microcavities
J. Lumin. 80, 137(1999)
45. Baojun Li, Guozheng Li, Enke Liu, Zuimin Jiang, Chengwen Pei, Xun Wang
1.5?m reflection-type optical waveguide switch based on plasma dispersion effect in SiGe/Si
Appl. Phy. Lett. 75, 1(1999)
46. F. Lu, S.K. Zhang, Z.M. Jiang, J. Qin, D.Z. Hu, X. Wang
Conductance-voltage characteristics of SiGe/Si quantum well structures
J. Korean Phys. Society 34, S73(1999)
47. Z.M. Jiang, C.W. Pei, X.F. Zhou, W.R. Jiang, B. Shi, X.H. Liu, Xun Wang, Q.J. Jia, W.L. Zheng, X.M. Jiang
*Study of strain in partially relaxed Ge epilayers on Si(100) substrate
Appl. Phy. Lett. 75, 370(1999)
48. Xiaomimg Jiang, Quanjie Jia, Zuimin Jiang, and Atsuo Iida
Depth profile od delta-doped semiconductors by x-ray reflection technique
Jpn. J. Appl. Phys. 38, Suppl. 38-1, 261(1999)
49. X.Z. Liao, J. Zou, D.J. Cockayne, J. Qin, Z.M. Jiang, Xun Wang, R. Leon
*Alloying effects in Ge islands grown (100)Si
Phys. Rev. B 60, 15605(1999)
50. Xingfei Zhou, Bin Shi, Zuimin Jiang, Weirong Jiang, Dongzhi Hu, Dawei Gong, Yongliang Fan, Xiangjiu Zhang, Xun Wang, Yuesheng Li
Boron-mediated growth of Ge quantum dots on Si(100) substrate
Thin Solid Film 369, 92(2000)
51. X. Z. Liao, J. Zou, D. J. H. Cockayne, Z. M. Jiang, X. Wang, R. Leon
*Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
Appl. Phys. Lett. 77, 1304(2000)
52. Z. M. Jiang, X. M. Jiang, W. R. Jiang, Q. J. Jia, W. L. Zheng, and Q. C. Qia
*Lattice strain and composition of self-organized Ge dots grown on Si(001)
Appl. Phys. Lett. 76, 3397(2000)
53. S. K. Zhang, Fang Lu, Z. M. Jiang, Xun Wang
Coulomb Charging effcet of holes in Ge quantum dots studied by deep level transient Spectroscopy
Thin Solid Film 369, 65(2000)
54. B. J. Li, J. J. Wan, G. Z. Li, Z. M. Jiang, En K. Liu, X. Wang
Y-branch 1.3/1.55μm wavelength demultiplexer based on the plasma dispersion effect
Thin Solid Films 369 , 419 (2000)
55. W. R. Jiang, Z. M. Jiang, B. Shi, H. Xiong, D. Z. Hu, D. W. Gong, and Y. L. Fan
Strains in Si substrate induced by formation of Ge islands
SPIE 4086, 108(2000)
56. W. R. Jiang, J. Qin, D. Z. Hu, H. Xiong, and Z. M. Jiang
A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)
J. Crystal Growth 227, 1106(2001)
57. H. Xiong, X. J. Zhang, Z. M. Jiang, J. H. Hu, B. Shi, X. F. Zhou, W. R. Jiang, D. Z. Hu, and Y. L. Fan
Strain relaxation and misfit dislocation in SiGe epilayers grown in micron size windows by MBE
J. Crystal Growth 233, 74 (2001)
58. X. Jiang, Z. Jiang, W. Jiang, Q. Jia, W. Zheng, D. Xian, and X. Wang
Study of strain and composition of the self-organized ge dots by grazing incident x-ray diffraction
Nucl. Instum. Methods A 467, 362(2001)
59. J. Wan, Y. H. Luo, Z. M. Jiang, G. L. Jin, J. L. Liu, K. L. Wang, X. Z. Liao, and J.Zou
Ge/Si interdiffusion in the GeSi dots and wetting layers
J. Appl. Phys. 90, 4290(2001)
60. J. Wan, G. L. Jin, Z. M. Jiang, Y. H. Luo, J. L. Liu and K. L. Wang
*Band alignments and photon-induced carrier transfer from wetting layers to Ge islands grown on Si(001)
Appl. Phys. Lett. 78, 1763(2001)
61. X. Z. Liao, J. Zou, D. J. H. Cockayne, Z. M. Jiang and X. Wang
*Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images
J. Appl. Phys. 90, 2725(2001)
62. B. Shi, Z. M. Jiang, and X. Wang
*Defective photonic crystals with greatly enhanced second-harmonic generation
Opt. Lett. 26, 1194(2001)
63. J. Wan, Y. H. Luo, Z. M. Jiang, G. L. Jin, J. L. Liu, K. L. Wang, X. Z. Liao, and J. Zou
*Effects of interdiffusion on the band alignment of GeSi dots
Appl. Phys. Lett. 79, 1980(2001)
64. X. Z. Liao, J. Zou, D. J. H. Cockayne, J. Wan, Z. M. Jiang, G. Jin, and K. L. Wang
*Annealing effects on the microstructure of Ge/Si(001) quantum dots
Appl. Phys. Lett. 79, 1258(2001)
65. Z. M. Jiang, B. Shi, D. T. Zhao, J. Liu, X. Wang
*Silicon-based photonic crystal heterostructure
Appl. Phys. Lett. 79, 3395(2001)
66. X. Z. Liao, J. Zou, D. J. H. Cockayna, J. Wan, Z. M. Jiang, G. Jin, K. L. Wang
*Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots
Phys. Rev. B 65, 153306(2002)
67. B. Shi, Z. M. Jiang, X. F. Zhou, X. Wang
*A two-dimensional nonlinear photonic crystals for strong second harmonic generation
J. Appl. Phys. 91, part 1, 6769(2002)
68. D. T. Zhao, B. Shi, Z. M. Jiang, Y. L. Fan, X. Wang
Silicon-based optical waveguide polarizer using photonic band gap
Appl. Phys. Lett. 81, 409(2002)
69. J. L. Liu, J. Wan, Z. M. Jiang, A. Khitun, K. L. Wang, D. P. Yu
*Optical phonons in self-assembled Ge quantum dot superlattices: strain relaxation effects
J. Appl. Phys. 92, 6804(2002)
70. J. Zou, X. Z. Liao, D. J. H. Cockayna, Z. M. Jiang
Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth
Appl. Phys. Lett. 81, 1996(2002)
71. D. Z. Hu, D. T. Zhao, W. R. Jiang, B. Shi, Y. L. Fan, Z. M. Jiang
Growth of Ge quantum dots on vicinal Si(001) substrate By solid phase epitaxy
J. Crystal Growth 236, 557(2002)
72. H. Zhou, S. H. Huang, Y. Rao, Z. M. Jiang, and F. Lu
Quantum levels in Ge quantum dots studied by photocurrent spectroscopy and admittance spectroscopy
Solid State Communications 125, 161(2003)
73. S. H. Huang, H. Zhou, Z. M. Jiang, and F. Lu
Electric field dependence of photocurrent absorption in GeSi/Si quantum wells
Microelectronic Engineering 66, 136(2003)
74. X. Jiang, T. H. Metzger, M. Sztucki, Z. Jiang, W. Jiang, D. Xian
Influences of Si spacer layers on the structures of Ge/Si quantum dot bilayers
Nucl. Instrum. Meth. B 200, 40(2003)
75. J. Cui, Q. He, X. M. Jiang, Y. L. Fan, X. J. Yang, F. Xue, and Z. M. Jiang
*Self-assembled SiGe quantum rings grown on Si(001) by molecular beam epitaxy
Appl. Phys. Lett. 83, 2907(2003)
76. Y. Rao, Q. Cao, Z. M. Jiang, Fang Lu
Coupling effect dependent on the thickness of the spacer layer between double layers of quantum dots
Appl. Surf. Science 224, 160-164(2004)
77. Z. J. Yan, R. Xu, Y. Y. Wang, S. Chen, Y. L. Fan, and Z. M. Jiang
*Thin HfO2 films grown on Si(100) by atomic oxygen assisted molecular beam epitaxy
Appl. Phys. Lett. 85, 85(2004)
78. J. Qin, F. Xue, Y. Wang, L. H. Bai, J. Cui, X. J. Yang, Y. L. Fan, and Z. M. Jiang
Phosphorus-mediated growth of Ge quantum dots on Si(001)
J. Crystal Growth 278, 136(2005)
79. J. Qin, F. Xue, L. Huang, Y. L. Fan, X. J. Yang, and Z. M. Jiang, Q. J. Jia, X. M. Jiang
An investigation of phosphorus surface segregation by X-ray measurements
Surface Science 580, 51(2005)
80. R. Xu, Z.J. Yan, S. Chen, Y.L. Fan, X.M. Ding, Z.M. Jiang, and Z.S. Li
In situ photoemission study on initial growth of HfO2 films on Si(100)
Surface Science 581, 236(2005)
81. R. Xu, Y.Y. Zhu, S. Chen, F. Xue, Y.L. Fan, X.J. Yang, and Z.M. Jiang
*Epitaxial growth of Er2O3 films on Si(001)
J. Crystal Growth 277, 496(2005)
82. S. H. Huang, H. Zhou, Z. M. Jiang, Fang Lu
The study of ultrafast phase dynamics of carriers in Ge quantum dots Photocurrent correlation phase spectroscopy
Nanotechnology 16, 53(2005)
83. Chen S, Zhu Y Y, Xu R, Wu YQ, Zou J, Yang XJ, Fan YL, Lu F, Jiang ZM and Zou J.
*Superior Electrical Properties of Crystalline Er2O3 films
Applied Physics Letters 88，222902(2006)
84. Zhu YY, Chen S, Xu R, Fang ZB, Zhao JF, Fan YL, Yang XJ and Jiang ZM
*Band offsets of Er2O3 films epitaxially grown on Si substrate
Applied Physics Letters 88，162909(2006)
85. F. H. Li, Y. L. Fan, X. J. Yang, Z. M. Jiang, Y. Q. Wu and J. Zou
Atomic composition profile change of SiGe islands during Si capping
Applied Physics Letters 89, 103108(2006)
86. F. Y. Yuan, Z. M. Jiang and F. Lu
Study of coupling effect in double-layer quantum dots by admittance spectroscopy
Applied Physics Letters 89, 072112(2006)
87. R. Wu, F. H. Li, Z. M. Jiang, X. J. Yang
Effects of a native oxide layer on the conductive atomic force microscopy measurements of self-assembled Ge quantum dots
Nanotechnology 17, 5111 (2006)
88. Y. Y. Zhu, R. Xu, S. Chen, Z. B. Fang, F. Xue, Y. L. Fan, X. J. Yang and Z.M. Jiang
Epitaxial growth of Er2O3 films on oxidized Si (111) and Si (001) substrates
Thin Solid Films 508, 86 (2006)
89. H. B. Yang , X. J. Zhang, Z. M. Jiang, X. D. Lu, L. H. Bai, X. J. Yang,Y. L. Fan, D. Z. Hu, Y. Q. Sun, W. N. Huang
The influence of the edge effect of the mask on the strain and the morphology of SiGe film grown at the patterned Si substrate by molecular beam epitaxy
Thin Solid Films 514, 344 (2006)
90. X. S. Cai, J. Qin, H B Yang, Y F Yuan, F. Lu, Y. L. Fan, and Z. M. Jiang
Energy levels in doped SiGe quantum well studied by admittance spectroscopy
Applied Surface Science 252, 2776 (2006)
91. Wu YQ, Zou J*, Li FH, Cui J, Lin JH, Wu R, Jiang ZM
The stability of faceted SiGe quantum dots capped with a thin Si layer
Nanotechnology 18, Art. No. 025404 (2007)
92. Qin J, Li FH, Wu YQ, Yang HB, Fan YL, Jiang ZM
Mechanism for coarsening of P-mediated Ge quantum dots during in situ annealing
Surface Science 601, 941 (2007)
93. Li F H, Tao Z S, Qin J, Wu Y Q, Zou J, Lu F, Fan Y L, Yang X J and Jiang Z M
Shape preservation of self-assembled SiGe quantum rings during Si capping
Nanotechnology 18, 115708 (2007)
94. Fang Z B, Chen S, Zhu Y Y, Wu Y Q, Fan Y L, Wang Y Y and Jiang Z M
Structural and electrical characterization of ultrathin Er2O3 films grown on Si(001)
by reactive evaporation
Nanotechnology 18, 155205 (2007)
95. Chen S, Zhu Y Y, Wu R, Wu Y Q, Fan Y L and Jiang Z M
Thermal stability of Er2O3 thin films grown epitaxially on Si substrates
J. Appl. Phys. 101, 064106 (2007)
96. Lin J H, Yang H B, Qin J, Zhang B, Fan Y L, Yang X J and Jiang Z M
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Influence of annealing oxygen pressure on the laser-induced thermoelectric voltage
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Single crystalline Tm(2)O(3) films grown on Si (0 0 1) by atomic oxygen assisted
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