PUBLICATIONS OF YEAR:

[2006] [2005] [2004] [2003] [2002] [2001] [2000] [1999] [1998] [1997] [1996] [1995] [1994] [1993] [1992] [1991] [1990]

[2006]

Zhou YC, Zhou J, Zhao JM, Zhang ST, Zhan YQ, Wang XZ, Wu Y, Ding XM, Hou XY

Optimal thickness of hole transport layer in doped OLEDs 
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 83 (3): 465-468 JUN 2006

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Zhou YC, Wu Y, Ma LL, Zhou J, Ding XM, Hou XY

Exciton migration in organic thin films 
JOURNAL OF APPLIED PHYSICS 100 (2): Art. No. 023712 JUL 15 2006

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Zhang ST, Zhou YC, Zhao JM, Zhan YQ, Wang ZJ, Wu Y, Ding XM, Hou XY
Role of hole playing in improving performance of organic light-emitting devices with an Al2O3 layer inserted at the cathode-organic interface 
APPLIED PHYSICS LETTERS 89 (4): Art. No. 043502 JUL 24 2006
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Song QL, Wu HR, Ding XM, Hou XY, Li FY, Zhou ZG

Exciton dissociation at the indium tin oxide-N,N '-bis(naphthalen-1-yl)N,N '-bis(phenyl) benzidine interface: A transient photovoltage study 
APPLIED PHYSICS LETTERS 88 (23): Art. No. 232101 JUN 5 2006
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Zhou YC, Ma LL, Zhou J, Gao XD, Wu HR, Ding XM, Hou XY
High contrast organic light-emitting devices with improved electrical characteristics 
APPLIED PHYSICS LETTERS 88 (23): Art. No. 233505 JUN 5 2006

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Wang ZJ, Wu Y, Zhou YC, Zhou J, Zhang ST, Ding XM, Hou XY, Zhu ZQ
Control of carrier transport in organic semiconductors by aluminum doping 
APPLIED PHYSICS LETTERS 88 (22): Art. No. 222112 MAY 29 2006

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Ma LL, Zhou YC, Jiang N, Lu X, Shao J, Lu W, Ge J, Ding XM, Hou XY
Wide-band "black silicon" based on porous silicon 
APPLIED PHYSICS LETTERS 88 (17): Art. No. 171907 APR 24 2006

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Xu SH, Ding XM, Xiong ZH, Liu Y, Liu Y, Wang ZJ, Zi J, Hou XY
Coupling of one-dimensionally confined optical modes in porous silicon: Spectral observation and photonic-quantum-well description 
PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS 4 (1): 17-22 FEB 2006

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Zhou W, Wang SH, Ji T, Zhu Y, Cai Q, Hou XY
Growth of erbium silicide nanowires on Si(001) surface studied by scanning tunneling microscopy 
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45 (3B): 2059-2062 MAR 2006

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Zhong GY, Ding XM, Zhou J, Jiang N, Huang W, Hou XY
Temperature-dependent photoluminescence of organic light-emitting materials: Types excitons involved in the and characteristics of emitting process 
CHEMICAL PHYSICS LETTERS 420 (4-6): 347-353 MAR 21 2006
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Wu Y, Wu HR, Zhou YC, Zhan YQ, Zhou J, Ding XM, Hou XY
Excitation energy transfer between tris-(8-hydroxyquinoline) aluminum and a red dye 
APPLIED PHYSICS LETTERS 88 (12): Art. No. 123512 MAR 20 2006

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Zhou W, Zhu Y, Ji T, Hou XY, Cai Q
Formation and evolution of erbium silicide nanowires on vicinal and flat Si(001) 
NANOTECHNOLOGY 17 (3): 852-858 FEB 14 2006
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[2005]

Song QL, Li FY, Yang H, Wu HR, Wang XZ, Zhou W, Zhao JM, Ding XM, Huang CH, Hou XY
Small-molecule organic solar cells with improved stability 
CHEMICAL PHYSICS LETTERS 416 (1-3): 42-46 NOV 29 2005

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Wang RZ, Ding XM, Wang B, Xue K, Xu JB, Yan H, Hou XY
Structural enhancement mechanism of field emission from multilayer semiconductor films 
PHYSICAL REVIEW B 72 (12): Art. No. 125310 SEP 2005
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Wu Y, Zhou YC, Wu HR, Zhan YQ, Zhou J, Zhang ST, Zhao JM, Wang ZJ, Ding XM, Hou XY
Metal-induced photoluminescence quenching of tri-(8-hydroxyquinoline) aluminum 
APPLIED PHYSICS LETTERS 87 (4): Art. No. 044104 JUL 25 2005
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Ding H, Wang XZ, Zhan YQ, Ding.X.M, Hou.X.Y
Photoemission study of the sodium stearate/tris-(8-hydroxyquinoline) aluminum interface 
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 144: 925-928 Sp. Iss. SI JUN 2005
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 Xiong ZH, Fan YL, Zhan YQ, Zhang ST, Ding XM, Hou XY

Studies on the microstructure, optical and electrical properties of organic microcavity devices based on a porous silicon reflector 
SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE 48 (2): 191-201 APR 2005
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Xu Z, Zhong GY, Ding XM, Obbard E, Ding HJ, Wang XJ, Zhan YQ, Zhang ST, Zhao JM, Zhao BL, Xiong ZH, Shi HZ, Huang W, Hou XY

Effect of electric fields on photoluminescence of 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran 
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 80 (8): 1753-1756 MAY 2005

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[2004]

- R. Z. Wang, X.M.Ding, K.Xue, B.L. Zhao, H. Yan, X.Y. Hou

Multipeak characteristics of field emission energy distribution from semiconductors

PHYSICAL REVIEW B 70, 195305 (2004)

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- Zhao JM, Zhan YQ, Zhang ST, et al.

Mechanisms of injection enhancement in organic light-emitting diodes through insulating buffer

APPLIED PHYSICS LETTERS 84 (26): 5377-5379 JUN 28 2004

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- Wu Y, Liu Y, Ding XM, et al.

Passivation of GaAs field-effect transistors in diluted S2Cl2 solution

APPLIED SURFACE SCIENCE 228 (1-4): 5-9 APR 30 2004

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- Zhao JM, Zhang ST, Wang XJ, et al.

Dual role of LiF as a hole-injection buffer in organic light-emitting diodes

APPLIED PHYSICS LETTERS 84 (15): 2913-2915 APR 12 2004

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- Zhang ST, Wang ZJ, Zhao JM, et al.

Electron blocking and hole injection: The role of N,N '-bis(naphthalen-1-y)-N,N '-bis(phenyl)benzidine in organic light-emitting devices

APPLIED PHYSICS LETTERS 84 (15): 2916-2918 APR 12 2004

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- Gan JA, Song QL, Hou XY, et al.

1,8-Naphthalimides for non-doping OLEDs: the tunable emission color from blue, green to red

JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY 162 (2-3): 399-406 MAR 15 2004

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- Wang XJ, Zhao JM, Zhou YC, et al.

Enhancement of electron injection in organic light-emitting devices using an Ag/LiF cathode

JOURNAL OF APPLIED PHYSICS 95 (7): 3828-3830 APR 1 2004

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- Zhang ST, Ding XM, Zhao JM, et al.

Buffer-layer-induced barrier reduction: Role of tunneling in organic light-emitting devices

APPLIED PHYSICS LETTERS 84 (3): 425-427 JAN 19 2004

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[2003]

- Fan QL, Lu S, Lai YH, et al.

Synthesis, characterization, and fluorescence quenching of novel cationic phenyl-substituted poly(p-phenylenevinylene)s

MACROMOLECULES 36 (19): 6976-6984 SEP 23 2003

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- Liu Y, Xiong ZH, Liu Y, et al.

A novel method of fabricating porous silicon material: ultrasonically enhanced anodic electrochemical etching

SOLID STATE COMMUNICATIONS 127 (8): 583-588 AUG 2003

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- Zhan YQ, Xiong ZH, Shi HZ, et al.

Sodium stearate, an effective amphiphilic molecule buffer material between organic and metal layers in organic light-emitting devices

APPLIED PHYSICS LETTERS 83 (8): 1656-1658 AUG 25 2003

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- Xiong ZH, Shi HZ, Fan YL, et al.

Enhanced chromaticity of organic electroluminescence from silicon-based organic microcavity

ACTA PHYSICA SINICA 52 (5): 1222-1229 MAY 2003

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- Xu SH, Xiong ZH, Gu LL, et al.

Photon confinement in one-dimensional photonic quantum-well structures of nanoporous silicon

SOLID STATE COMMUNICATIONS 126 (3): 125-128 APR 2003

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- Xu SH, Xiong ZH, Gu LL, et al.

Preparation of one-dimensional porous silicon photonic quantum-well structures

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 76 (4): 589-592 MAR 2003

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-Jia-An Gana, Qun Liang Songb, Xiao Yuan Hou, Kongchang Chena, He Tiana

1,8-Naphthalimides for non-doping OLEDs: the tunable emission color from blue, green to red

JOURNAL of PHOTOCHEMISTRY and PHOTOBIOLOGY A: Chemistry 162 (2004) 399¨C406

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[2002]

- Xu SH, Xiong ZH, Gu LL, et al.
Narrow-line light emission from porous silicon multilayers and microcavities
SEMICOND SCI TECH 17 (9): 1004-1007 SEP 2002

- Zhong GY, Xu Z, He J, et al.
Aggregation and permeation of 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran molecules in Alq
APPL PHYS LETT 81 (6): 1122-1124 AUG 5 2002

- Zhong GY, He J, Zhang ST, et al.
In situ photoluminescence investigation of doped Alq
APPL PHYS LETT 80 (25): 4846-4848 JUN 24 2002

- Liang HB, He H, Zeng QH, et al.
VUV and Eu-L-3 edge XANES spectra of europium-doped strontium tetraborate prepared in air
J ELECTRON SPECTROSC 124 (1): 67-72 JUN 2002

- Xiong ZH, Liao LS, Ding XM, et al.
Flat layered structure and improved photoluminescence emission from porous silicon microcavities formed by pulsed anodic etching
APPL PHYS A-MATER 74 (6): 807-811 JUN 2002

- Tian H, Gan J, Chen KC, et al.
Positive and negative fluorescent imaging induced by naphthalimide polymers
J MATER CHEM 12 (5): 1262-1267 2002

- You FT, Wang YX, Lin JH, et al.
Systematic synthesis of ammonium rare earth fluorides and the luminescent properties of NH4GdF4 : Eu
CHIN J INORG CHEM 18 (1): 41-44 JAN 2002

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[2001]

- Gu LL, Xiong ZH, Chen G, et al.
Luminescent erbium-doped porous silicon bilayer structures
ADV MATER 13 (18): 1402-1405 SEP 14 2001

- Xiong ZH, Liao LS, Yuan S, et al.
Effects of O, H and N passivation on photoluminescence from porous silicon
THIN SOLID FILMS 388 (1-2): 271-276 JUN 1 2001

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[2000]

- Dong Y, Ding XM, Hou XY, et al.
Sulfur passivation of GaAs metal-semiconductor field-effect transistor
APPL PHYS LETT 77 (23): 3839-3841 DEC 4 2000

- Deng ZB, Ding XM, Liao LS, et al.
The interface analyses of inorganic layer for organic electroluminescent devices
DISPLAYS 21 (2-3): 79-82 AUG 1 2000

- Liao LS, He J, Zhou X, et al.
Bubble formation in organic light-emitting diodes
J APPL PHYS 88 (5): 2386-2390 SEP 1 2000

- Ding XM, Hung LM, Cheng LF, et al.
Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy
APPL PHYS LETT 76 (19): 2704-2706 MAY 8 2000

- Lai B, Ding XM, Yuan ZL, et al.
Synchrotron radiation photoelectron spectroscopy study of ITO surface
APPL SURF SCI 157 (1-2): 35-38 MAR 2000

- Wang KL, Lai B, Lu M, et al.
Electronic structure and energy level alignment of Alq(3)/Al2O3/Al and Alq(3)/Al interfaces studied by ultraviolet photoemission spectroscopy
THIN SOLID FILMS 363 (1-2): 178-181 MAR 1 2000

- He J, Lu M, Zhou X, et al.
Damage study of ITO under high electric field
THIN SOLID FILMS 363 (1-2): 240-243 MAR 1 2000

- Zhou X, He J, Liao LS, et al.
Real-time observation of temperature rise and thermal breakdown processes in organic LEDs using an IR imaging and analysis system
ADV MATER 12 (4): 265-269 FEB 17 2000

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[1999]

- Cao XA, Hu HT, Dong Y, et al.
The structural, chemical, and electronic properties of a stable GaS/GaAs interface
J APPL PHYS 86 (12): 6940-6944 DEC 15 1999

- Zhou X, He J, Liao LS, et al.
Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode
APPL PHYS LETT 74 (4): 609-611 JAN 25 1999

- Zhang RQ, Hou XY, Lee ST
Theory of magnesium/Alq(3) interaction in organic light emitting devices
APPL PHYS LETT 74 (11): 1612-1614 MAR 15 1999

- Lee ST, Wang YM, Hou XY, et al.
Interfacial electronic structures in an organic light-emitting diode
APPL PHYS LETT 74 (5): 670-672 FEB 1 1999

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[1998]

- Yuan ZL, Ding XM, Lai B, et al.
Neutralized (NH4)(2)S solution passivation of III-V phosphide surfaces
APPL PHYS LETT 73 (20): 2977-2979 NOV 16 1998

- Cao XA, Hu HT, Ding XM, et al.
Passivation of the GaAs(100) surface with a vapor-deposited GaS film
J VAC SCI TECHNOL B 16 (5): 2656-2659 SEP-OCT 1998

- Yuan ZL, Lai B, Ding XM, et al.
Auger electron spectroscopy of neutralized (NH4)(2)S-passivated InP(100) surfaces
APPL SURF SCI 134 (1-4): 69-72 SEP 1998

- Liao LS, Liu XB, Ziong ZH, et al.
Photoluminescence from Si-based SiNxOy films
CHINESE SCI BULL 43 (2): 124-126 JAN 1998

- Lee ST, Hou XY, Mason MG, et al.
Energy level alignment at Alq/metal interfaces
APPL PHYS LETT 72 (13): 1593-1595 MAR 30 1998

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[1997]

- Ding XM, Yuan ZL, Hu HT, et al.
Synchrotron radiation photoemission study of S-passivated GaAs surfaces
NUCL INSTRUM METH B 133 (1-4): 90-93 DEC 1997

- Yuan ZL, Ding XM, Hu HT, et al.
Investigation of neutralized (NH4)(2)S solution passivation of GaAs (100) surfaces
APPL PHYS LETT 71 (21): 3081-3083 NOV 24 1997

- Liao LS, Xiong ZH, Zhou X, et al.
Photoluminescence from C+-implanted SiNxOy films grown on crystalline silicon
APPL PHYS LETT 71 (15): 2193-2195 OCT 13 1997

- Liao LS, Hou XY
Photoluminescence from C+-implanted SiO2 films thermally grown on crystalline silicon
PROG NAT SCI 7 (4): 489-493 AUG 1997

- Chen XY, Hou XY, Cao XA, et al.
Gallium sulfide thin film grown on GaAs(100) by microwave glow discharge
J CRYST GROWTH 173 (1-2): 51-56 MAR 1997

- Li GB, Liao LS, Liu XB, et al.
Stable and intense blue-green emission in porous silicon achieved by amine immersion and rapid thermal oxidation
APPL PHYS LETT 70 (10): 1284-1286 MAR 10 1997

- Cao XA, Hou XY, Chen XY, et al.
Passivation of GaAs/AlGaAs heterojunction bipolar transistors by S2Cl2 solution
APPL PHYS LETT 70 (6): 747-749 FEB 10 1997

-C.X.JIN, Z.LING, D.H.WANG, D.M.HUANG, X.Y.HOU,and XUN WANG

Phonon modes of ZnS12 xTex alloys epitaxially grown on (100) GaAs substrates

J.APPL.Phys.81(8),15 April 1997

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[1996]

- Li GB, Hou XY, Yuan S, et al.
Passivation of light-emitting porous silicon by rapid thermal treatment in NH3
J APPL PHYS 80 (10): 5967-5970 NOV 15 1996

- Xu QJ, Ding XM, Hou XY, et al.
Nitridation of GaAs surfaces stimulated by nitrogen glow discharge
APPL SURF SCI 104: 468-471 SEP 1996

- Wang X, Hou XY, Li ZS, et al.
X-ray photoelectron spectroscopic studies of sulphur-passivated GaAs surfaces
SURF INTERFACE ANAL 24 (9): 564-568 SEP 16 1996

- Hou XY, Chen XY, Li ZS, et al.
Passivation of GaAs surface by sulfur glow discharge
APPL PHYS LETT 69 (10): 1429-1431 SEP 2 1996

- Zhao SY, Lu XZ, Zhang FL, et al.
Transient photovoltaic investigations of a Schottky-type porous silicon diode
J PHYS D APPL PHYS 29 (5): 1326-1328 MAY 14 1996

- Wang X, Hou XY
Progress in sulfur passivation of GaAs surfaces
INST PHYS CONF SER 145: 267-272 1996

- Hou XY, Fan HL, Xu L, et al.
Pulsed anodic etching: An effective method of preparing light-emitting porous silicon
APPL PHYS LETT 68 (17): 2323-2325 APR 22 1996

- Chen HJ, Hou XY, Li GB, et al.
Passivation of porous silicon by wet thermal oxidation
J APPL PHYS 79 (6): 3282-3285 MAR 15 1996

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[1995]

- WANG J, LIU XH, LI ZS, et al.
RAMAN-SCATTERING CHARACTERIZATION OF THE CRYSTALLINE QUALITIES OF ZNSE FILMS GROWN ON S-PASSIVATED GAAS(100) SUBSTRATES
APPL PHYS LETT 67 (14): 2043-2045 OCT 2 1995

- LI ZS, HOU XY, CAL WZ, et al.
A MILD ELECTROCHEMICAL SULFUR PASSIVATION METHOD FOR GAAS(100) SURFACES
J APPL PHYS 78 (4): 2764-2766 AUG 15 1995

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[1994]

- CHEN LY, HOU XY, HUANG DM, et al.
STUDY OF PHOTON-TRAPPING PHENOMENON IN POROUS SILICON LAYER
ACTA PHYS SIN-OV ED 3 (8): 595-607 AUG 1994

- CAI WZ, LI ZS, DING XM, et al.
HOT-WALL EPITAXIAL-GROWTH OF ZNSE ON S-PASSIVATED GAAS (100) SUBSTRATE
J CRYST GROWTH 142 (3-4): 397-399 SEP 1994

- WANG J, WANG WC, ZHENG JB, et al.
TEMPERATURE-DEPENDENT PICOSECOND TIME-RESOLVED CARRIER DYNAMICS IN VISIBLE-LIGHT-EMITTING POROUS SILICON
SOLID STATE COMMUN 91 (3): 239-243 JUL 1994

- HAO PH, HOU XY, ZHANG FL, et al.
ENERGY-BAND LINEUP AT THE POROUS-SILICON SILICON HETEROINTERFACE MEASURED BY ELECTRON-SPECTROSCOPY
APPL PHYS LETT 64 (26): 3602-3604 JUN 27 1994

- CHEN LY, HOU XY, HUANG DM, et al.
OPTICAL STUDY OF PHOTON-TRAPPED POROUS SILICON LAYER
JPN J APPL PHYS 1 33 (4A): 1937-1943 APR 1994

- LI ZS, CAI WZ, SU RZ, et al.
S2CL2 TREATMENT - A NEW SULFUR PASSIVATION METHOD OF GAAS SURFACE
APPL PHYS LETT 64 (25): 3425-3427 JUN 20 1994

- WANG J, ZHANG FL, WANG WC, et al.
TRANSIENT ELECTROLUMINESCENCE BEHAVIOR AND MECHANISM OF A SCHOTTKY-TYPE POROUS SILICON DIODE
J APPL PHYS 75 (2): 1070-1073 JAN 15 1994

- HE ZQ, DING XM, HOU XY, et al.
MOLECULAR-BEAM-EPITAXY GROWTH OF GAN ON GAAS(100) BY USING REACTIVE NITROGEN-SOURCE
APPL PHYS LETT 64 (3): 315-317 JAN 17 1994

- YANG M, HUANG DM, HAO PH, et al.
STUDY OF THE RAMAN PEAK SHIFT AND THE LINEWIDTH OF LIGHT-EMITTING POROUS SILICON
J APPL PHYS 75 (1): 651-653 JAN 1 1994

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[1993]

- ZHANG FL, HAO PH, SHI G, et al.
IMPROVEMENT OF ELECTROLUMINESCENCE PROPERTIES OF LIGHT-EMITTING POROUS SILICON
SEMICOND SCI TECH 8 (11): 2015-2017 NOV 1993

- WANG X, SHI G, ZHANG FL, et al.
CRITICAL CONDITIONS FOR ACHIEVING BLUE-LIGHT EMISSION FROM POROUS SILICON
APPL PHYS LETT 63 (17): 2363-2365 OCT 25 1993

- WANG J, JIANG HB, WANG WC, et al.
ANISOTROPY OF INFRARED-UP-CONVERSION LUMINESCENCE GENERATION IN POROUS SILICON
PHYS REV B 48 (8): 5653-5656 AUG 15 1993

- WANG X, HUANG DM, YE L, et al.
PINNING OF PHOTOLUMINESCENCE PEAK POSITIONS FOR LIGHT-EMITTING POROUS SILICON - AN EVIDENCE OF QUANTUM-SIZE EFFECT
PHYS REV LETT 71 (8): 1265-1267 AUG 23 1993

- HOU XY, SHI G, WANG W, et al.
LARGE BLUE SHIFT OF LIGHT-EMITTING POROUS SILICON BY BOILING WATER-TREATMENT
APPL PHYS LETT 62 (10): 1097-1098 MAR 8 1993

- Z.Q.HE,X.M.DING,X.Y.HOU,and XUN WANG

Molecular-beam-epitaxy growth of GaN on GaAs(lOO) by using reactive nitrogen source

APPL. PHYS. LETT.64(3),17 January 1994

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[1992]

- WANG J, JIANG HB, WANG WC, et al.
EFFICIENT INFRARED-UP-CONVERSION LUMINESCENCE IN POROUS SILICON - A QUANTUM-CONFINEMENT-INDUCED EFFECT
PHYS REV LETT 69 (22): 3252-3255 NOV 30 1992

- ZHU JH, HOU XY, DING XM, et al.
STUDY OF HREELS AND XPS ON SULFIDE PASSIVATED GAAS(100) SURFACE
CHINESE PHYS 12 (3): 753-757 JUL-SEP 1992

- HOU XY, CAI WZ, HE ZQ, et al.
ELECTROCHEMICAL SULFUR PASSIVATION OF GAAS
APPL PHYS LETT 60 (18): 2252-2254 MAY 4 1992

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[1991]

- KAMPEN TU, TROOST D, HOU XY, et al.
SURFACE-PHOTOVOLTAGE EFFECTS ON ADSORBATE-COVERED SEMICONDUCTOR SURFACES AT LOW-TEMPERATURES
J VAC SCI TECHNOL B 9 (4): 2095-2099 JUL-AUG 1991

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[1990]

- HOU XY, TROOST D, MONCH W
SURFACE DONORS INDUCED BY HYDROGEN AND CESIUM ABSORBED ON INP(110) SURFACES
PHYS SCRIPTA 41 (6): 933-934 JUN 1990

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