PUBLICATIONS OF YEAR:
[2004]
- R. Z. Wang, X.M.Ding, K.Xue, B.L.
Zhao, H. Yan, X.Y. Hou
Multipeak characteristics of field
emission energy distribution from semiconductors
PHYSICAL REVIEW B 70, 195305 (2004)
- Zhao JM, Zhan YQ, Zhang ST, et
al.
Mechanisms of injection enhancement
in organic light-emitting diodes through insulating buffer
APPLIED PHYSICS LETTERS 84 (26):
5377-5379 JUN 28 2004
- Wu Y, Liu Y, Ding XM, et al.
Passivation of GaAs field-effect
transistors in diluted S2Cl2 solution
APPLIED SURFACE SCIENCE 228 (1-4):
5-9 APR 30 2004
- Zhao JM, Zhang ST, Wang XJ, et
al.
Dual role of LiF as a
hole-injection buffer in organic light-emitting diodes
APPLIED PHYSICS LETTERS 84 (15):
2913-2915 APR 12 2004
- Zhang ST, Wang ZJ, Zhao JM, et
al.
Electron blocking and hole
injection: The role of N,N '-bis(naphthalen-1-y)-N,N '-bis(phenyl)benzidine in
organic light-emitting devices
APPLIED PHYSICS LETTERS 84 (15):
2916-2918 APR 12 2004
- Gan JA, Song QL, Hou XY, et al.
1,8-Naphthalimides for non-doping
OLEDs: the tunable emission color from blue, green to red
JOURNAL OF PHOTOCHEMISTRY AND
PHOTOBIOLOGY A-CHEMISTRY 162 (2-3): 399-406 MAR 15 2004
- Wang XJ, Zhao JM, Zhou YC, et al.
Enhancement of electron injection
in organic light-emitting devices using an Ag/LiF cathode
JOURNAL OF APPLIED PHYSICS 95 (7):
3828-3830 APR 1 2004
- Zhang ST, Ding XM, Zhao JM, et
al.
Buffer-layer-induced barrier
reduction: Role of tunneling in organic light-emitting devices
APPLIED PHYSICS LETTERS 84 (3):
425-427 JAN 19 2004
[2003]
- Fan QL, Lu S, Lai YH, et al.
Synthesis, characterization, and
fluorescence quenching of novel cationic phenyl-substituted
poly(p-phenylenevinylene)s
MACROMOLECULES 36 (19): 6976-6984
SEP 23 2003
- Liu Y, Xiong ZH, Liu Y, et al.
A novel method of fabricating
porous silicon material: ultrasonically enhanced anodic electrochemical
etching
SOLID STATE COMMUNICATIONS 127 (8):
583-588 AUG 2003
- Zhan YQ, Xiong ZH, Shi HZ, et al.
Sodium stearate, an effective
amphiphilic molecule buffer material between organic and metal layers in
organic light-emitting devices
APPLIED PHYSICS LETTERS 83 (8):
1656-1658 AUG 25 2003
- Xiong ZH, Shi HZ, Fan YL, et al.
Enhanced chromaticity of organic
electroluminescence from silicon-based organic microcavity
ACTA PHYSICA SINICA 52 (5):
1222-1229 MAY 2003
- Xu SH, Xiong ZH, Gu LL, et al.
Photon confinement in
one-dimensional photonic quantum-well structures of nanoporous silicon
SOLID STATE COMMUNICATIONS 126 (3):
125-128 APR 2003
- Xu SH, Xiong ZH, Gu LL, et al.
Preparation of one-dimensional
porous silicon photonic quantum-well structures
APPLIED PHYSICS A-MATERIALS SCIENCE
& PROCESSING 76 (4): 589-592 MAR 2003
[2002]
- Xu SH, Xiong ZH, Gu LL, et al.
Narrow-line light emission from porous silicon multilayers and microcavities
SEMICOND SCI TECH 17 (9): 1004-1007 SEP 2002
- Zhong GY, Xu Z, He J, et al.
Aggregation and permeation of 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran molecules in Alq
APPL PHYS LETT 81 (6): 1122-1124 AUG 5 2002
- Zhong GY, He J, Zhang ST, et al.
In situ photoluminescence investigation of doped Alq
APPL PHYS LETT 80 (25): 4846-4848 JUN 24 2002
- Liang HB, He H, Zeng QH, et al.
VUV and Eu-L-3 edge XANES spectra of europium-doped strontium tetraborate prepared in air
J ELECTRON SPECTROSC 124 (1): 67-72 JUN 2002
- Xiong ZH, Liao LS, Ding XM, et al.
Flat layered structure and improved photoluminescence emission from porous silicon microcavities formed by pulsed anodic etching
APPL PHYS A-MATER 74 (6): 807-811 JUN 2002
- Tian H, Gan J, Chen KC, et al.
Positive
and negative fluorescent imaging induced by naphthalimide polymers
J MATER CHEM 12 (5): 1262-1267 2002
- You FT, Wang YX, Lin JH, et al.
Systematic
synthesis of ammonium rare earth fluorides and the luminescent properties of
NH4GdF4 : Eu
CHIN J INORG CHEM 18 (1): 41-44 JAN 2002
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[2001]
- Gu LL, Xiong ZH, Chen G, et al.
Luminescent erbium-doped porous silicon bilayer structures
ADV MATER 13 (18): 1402-1405 SEP 14 2001
- Xiong ZH, Liao LS, Yuan S, et al.
Effects
of O, H and N passivation on photoluminescence from porous silicon
THIN SOLID FILMS 388 (1-2): 271-276 JUN 1 2001
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[2000]
- Dong Y, Ding XM, Hou XY, et al.
Sulfur passivation of GaAs metal-semiconductor field-effect transistor
APPL PHYS LETT 77 (23): 3839-3841 DEC 4 2000
- Deng ZB, Ding XM, Liao LS, et al.
The interface analyses of inorganic layer for organic electroluminescent devices
DISPLAYS 21 (2-3): 79-82 AUG 1 2000
- Liao LS, He J, Zhou X, et al.
Bubble formation in organic light-emitting diodes
J APPL PHYS 88 (5): 2386-2390 SEP 1 2000
- Ding XM, Hung LM, Cheng LF, et al.
Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy
APPL PHYS LETT 76 (19): 2704-2706 MAY 8 2000
- Lai B, Ding XM, Yuan ZL, et al.
Synchrotron radiation photoelectron spectroscopy study of ITO surface
APPL SURF SCI 157 (1-2): 35-38 MAR 2000
- Wang KL, Lai B, Lu M, et al.
Electronic structure and energy level alignment of Alq(3)/Al2O3/Al and Alq(3)/Al interfaces studied by ultraviolet photoemission spectroscopy
THIN SOLID FILMS 363 (1-2): 178-181 MAR 1 2000
- He J, Lu M, Zhou X, et al.
Damage study of ITO under high electric field
THIN SOLID FILMS 363 (1-2): 240-243 MAR 1 2000
- Zhou X, He J, Liao LS, et al.
Real-time
observation of temperature rise and thermal breakdown processes in organic LEDs
using an IR imaging and analysis system
ADV MATER 12 (4): 265-269 FEB 17 2000
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[1999]
- Cao XA, Hu HT, Dong Y, et al.
The
structural, chemical, and electronic properties of a stable GaS/GaAs interface
J APPL PHYS 86 (12): 6940-6944 DEC 15 1999
- Zhou X, He J, Liao LS, et al.
Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode
APPL PHYS LETT 74 (4): 609-611 JAN 25 1999
- Zhang RQ, Hou XY, Lee ST
Theory of magnesium/Alq(3) interaction in organic light emitting devices
APPL PHYS LETT 74 (11): 1612-1614 MAR 15 1999
- Lee ST, Wang YM, Hou XY, et al.
Interfacial
electronic structures in an organic light-emitting diode
APPL PHYS LETT 74 (5): 670-672 FEB 1 1999
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[1998]
- Yuan ZL, Ding XM, Lai B, et al.
Neutralized (NH4)(2)S solution passivation of III-V phosphide surfaces
APPL PHYS LETT 73 (20): 2977-2979 NOV 16 1998
- Cao XA, Hu HT, Ding XM, et al.
Passivation of the GaAs(100) surface with a vapor-deposited GaS film
J VAC SCI TECHNOL B 16 (5): 2656-2659 SEP-OCT 1998
- Yuan ZL, Lai B, Ding XM, et al.
Auger electron spectroscopy of neutralized (NH4)(2)S-passivated InP(100) surfaces
APPL SURF SCI 134 (1-4): 69-72 SEP 1998
- Liao LS, Liu XB, Ziong ZH, et al.
Photoluminescence from Si-based SiNxOy films
CHINESE SCI BULL 43 (2): 124-126 JAN 1998
- Lee ST, Hou XY, Mason MG, et al.
Energy
level alignment at Alq/metal interfaces
APPL PHYS LETT 72 (13): 1593-1595 MAR 30 1998
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[1997]
- Ding XM, Yuan ZL, Hu HT, et al.
Synchrotron radiation photoemission study of S-passivated GaAs surfaces
NUCL INSTRUM METH B 133 (1-4): 90-93 DEC 1997
- Yuan ZL, Ding XM, Hu HT, et al.
Investigation of neutralized (NH4)(2)S solution passivation of GaAs (100) surfaces
APPL PHYS LETT 71 (21): 3081-3083 NOV 24 1997
- Liao LS, Xiong ZH, Zhou X, et al.
Photoluminescence from C+-implanted SiNxOy films grown on crystalline silicon
APPL PHYS LETT 71 (15): 2193-2195 OCT 13 1997
- Liao LS, Hou XY
Photoluminescence from C+-implanted SiO2 films thermally grown on crystalline silicon
PROG NAT SCI 7 (4): 489-493 AUG 1997
- Chen XY, Hou XY, Cao XA, et al.
Gallium sulfide thin film grown on GaAs(100) by microwave glow discharge
J CRYST GROWTH 173 (1-2): 51-56 MAR 1997
- Li GB, Liao LS, Liu XB, et al.
Stable
and intense blue-green emission in porous silicon achieved by amine immersion
and rapid thermal oxidation
APPL PHYS LETT 70 (10): 1284-1286 MAR 10 1997
- Cao XA, Hou XY, Chen XY, et al.
Passivation
of GaAs/AlGaAs heterojunction bipolar transistors by S2Cl2 solution
APPL PHYS LETT 70 (6): 747-749 FEB 10 1997
-C.X.JIN, Z.LING, D.H.WANG, D.M.HUANG, X.Y.HOU,and XUN WANG
Phonon modes of ZnS12 xTex alloys epitaxially
grown on (100) GaAs substrates
J.APPL.Phys.81(8),15 April 1997
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[1996]
- Li GB, Hou XY, Yuan S, et al.
Passivation of light-emitting porous silicon by rapid thermal treatment in NH3
J APPL PHYS 80 (10): 5967-5970 NOV 15 1996
- Xu QJ, Ding XM, Hou XY, et al.
Nitridation of GaAs surfaces stimulated by nitrogen glow discharge
APPL SURF SCI 104: 468-471 SEP 1996
- Wang X, Hou XY, Li ZS, et al.
X-ray photoelectron spectroscopic studies of sulphur-passivated GaAs surfaces
SURF INTERFACE ANAL 24 (9): 564-568 SEP 16 1996
- Hou XY, Chen XY, Li ZS, et al.
Passivation of GaAs surface by sulfur glow discharge
APPL PHYS LETT 69 (10): 1429-1431 SEP 2 1996
- Zhao SY, Lu XZ, Zhang FL, et al.
Transient photovoltaic investigations of a Schottky-type porous silicon diode
J PHYS D APPL PHYS 29 (5): 1326-1328 MAY 14 1996
- Wang X, Hou XY
Progress in sulfur passivation of GaAs surfaces
INST PHYS CONF SER 145: 267-272 1996
- Hou XY, Fan HL, Xu L, et al.
Pulsed anodic etching: An effective method of preparing light-emitting porous silicon
APPL PHYS LETT 68 (17): 2323-2325 APR 22 1996
- Chen HJ, Hou XY, Li GB, et al.
Passivation
of porous silicon by wet thermal oxidation
J APPL PHYS 79 (6): 3282-3285 MAR 15 1996
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[1995]
- WANG J, LIU XH, LI ZS, et al.
RAMAN-SCATTERING CHARACTERIZATION OF THE CRYSTALLINE QUALITIES OF ZNSE FILMS GROWN ON S-PASSIVATED GAAS(100) SUBSTRATES
APPL PHYS LETT 67 (14): 2043-2045 OCT 2 1995
- LI ZS, HOU XY, CAL WZ, et al.
A
MILD ELECTROCHEMICAL SULFUR PASSIVATION METHOD FOR GAAS(100) SURFACES
J APPL PHYS 78 (4): 2764-2766 AUG 15 1995
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[1994]
- CHEN LY, HOU XY, HUANG DM, et al.
STUDY OF PHOTON-TRAPPING PHENOMENON IN POROUS SILICON LAYER
ACTA PHYS SIN-OV ED 3 (8): 595-607 AUG 1994
- CAI WZ, LI ZS, DING XM, et al.
HOT-WALL EPITAXIAL-GROWTH OF ZNSE ON S-PASSIVATED GAAS (100) SUBSTRATE
J CRYST GROWTH 142 (3-4): 397-399 SEP 1994
- WANG J, WANG WC, ZHENG JB, et al.
TEMPERATURE-DEPENDENT PICOSECOND TIME-RESOLVED CARRIER DYNAMICS IN VISIBLE-LIGHT-EMITTING POROUS SILICON
SOLID STATE COMMUN 91 (3): 239-243 JUL 1994
- HAO PH, HOU XY, ZHANG FL, et al.
ENERGY-BAND LINEUP AT THE POROUS-SILICON SILICON HETEROINTERFACE MEASURED BY ELECTRON-SPECTROSCOPY
APPL PHYS LETT 64 (26): 3602-3604 JUN 27 1994
- CHEN LY, HOU XY, HUANG DM, et al.
OPTICAL STUDY OF PHOTON-TRAPPED POROUS SILICON LAYER
JPN J APPL PHYS 1 33 (4A): 1937-1943 APR 1994
- LI ZS, CAI WZ, SU RZ, et al.
S2CL2 TREATMENT - A NEW SULFUR PASSIVATION METHOD OF GAAS SURFACE
APPL PHYS LETT 64 (25): 3425-3427 JUN 20 1994
- WANG J, ZHANG FL, WANG WC, et al.
TRANSIENT ELECTROLUMINESCENCE BEHAVIOR AND MECHANISM OF A SCHOTTKY-TYPE POROUS SILICON DIODE
J APPL PHYS 75 (2): 1070-1073 JAN 15 1994
- HE ZQ, DING XM, HOU XY, et al.
MOLECULAR-BEAM-EPITAXY GROWTH OF GAN ON GAAS(100) BY USING REACTIVE NITROGEN-SOURCE
APPL PHYS LETT 64 (3): 315-317 JAN 17 1994
- YANG M, HUANG DM, HAO PH, et al.
STUDY
OF THE RAMAN PEAK SHIFT AND THE LINEWIDTH OF LIGHT-EMITTING POROUS SILICON
J APPL PHYS 75 (1): 651-653 JAN 1 1994
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[1993]
- ZHANG FL, HAO PH, SHI G, et al.
IMPROVEMENT OF ELECTROLUMINESCENCE PROPERTIES OF LIGHT-EMITTING POROUS SILICON
SEMICOND SCI TECH 8 (11): 2015-2017 NOV 1993
- WANG X, SHI G, ZHANG FL, et al.
CRITICAL CONDITIONS FOR ACHIEVING BLUE-LIGHT EMISSION FROM POROUS SILICON
APPL PHYS LETT 63 (17): 2363-2365 OCT 25 1993
- WANG J, JIANG HB, WANG WC, et al.
ANISOTROPY OF INFRARED-UP-CONVERSION LUMINESCENCE GENERATION IN POROUS SILICON
PHYS REV B 48 (8): 5653-5656 AUG 15 1993
- WANG X, HUANG DM, YE L, et al.
PINNING OF PHOTOLUMINESCENCE PEAK POSITIONS FOR LIGHT-EMITTING POROUS SILICON - AN EVIDENCE OF QUANTUM-SIZE EFFECT
PHYS REV LETT 71 (8): 1265-1267 AUG 23 1993
- HOU XY, SHI G, WANG W, et al.
LARGE
BLUE SHIFT OF LIGHT-EMITTING POROUS SILICON BY BOILING WATER-TREATMENT
APPL PHYS LETT 62 (10): 1097-1098 MAR 8 1993
- Z.Q.HE,X.M.DING,X.Y.HOU,and XUN WANG
Molecular-beam-epitaxy growth of GaN on GaAs(lOO) by using reactive nitrogen
source
APPL. PHYS. LETT.64(3),17 January 1994
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[1992]
- WANG J, JIANG HB, WANG WC, et al.
EFFICIENT INFRARED-UP-CONVERSION LUMINESCENCE IN POROUS SILICON - A QUANTUM-CONFINEMENT-INDUCED EFFECT
PHYS REV LETT 69 (22): 3252-3255 NOV 30 1992
- ZHU JH, HOU XY, DING XM, et al.
STUDY OF HREELS AND XPS ON SULFIDE PASSIVATED GAAS(100) SURFACE
CHINESE PHYS 12 (3): 753-757 JUL-SEP 1992
- HOU XY, CAI WZ, HE ZQ, et al.
ELECTROCHEMICAL
SULFUR PASSIVATION OF GAAS
APPL PHYS LETT 60 (18): 2252-2254 MAY 4 1992
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[1991]
- KAMPEN TU, TROOST D, HOU XY, et al.
SURFACE-PHOTOVOLTAGE
EFFECTS ON ADSORBATE-COVERED SEMICONDUCTOR SURFACES AT LOW-TEMPERATURES
J VAC SCI TECHNOL B 9 (4): 2095-2099 JUL-AUG 1991
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[1990]
- HOU XY, TROOST D, MONCH W
SURFACE DONORS INDUCED BY HYDROGEN AND CESIUM ABSORBED ON INP(110) SURFACES
PHYS SCRIPTA 41 (6): 933-934 JUN 1990
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