著作(Book)
Surface Physics and Surface Analysis (Fudan
Series in Graduate Textbooks)
Xunmin
Ding, Xinju Yang, and Xun Wang
Fudan
University
Press,
Shanghai
,
2004
SCI论文目录
PUBLICATION LIST
(Up to 2006.12)
I.
表面与界面
(1) InP和GaAs表面
1. The variation of In islands on InP
surface mversus ion sputtering angle observed by the electron energy loss
spectroscopy.
Hou
Xiaoyuan, Yu Mingren, and Wang Xun
Chinese Phys. Lett. 2, 31 (1985).
2. The
elimination of In islands on InP surfaces and its mechanism.
Jin
Xiaofeng, Yu Mingren, and Wang Xun
Chinese Phys. Lett. 2, 345 (1985).
3. A
LEED, ELS study of InP(100) surfaces prepared by phosphorus deposition and post
annealing.
Xiaofeng
Jin, Mingren Yu, Furong Zhu, and Xun
Wang
Semicond. Sci. Technol. 1,293 (1986).
4. An
angle resolved photoemission study of InP(111) clean surface.
Hou
Xiaoyuan, Dong Guosheng, Ding Xunmin, and Wang
Xun
Chinese Phys. Lett. 3, 545 (1986).
5. Comparative
high-resolution electron-energy-loss spectroscopy study of hydrogen adsorption
on GaAs and InP(111) and (111) surfaces.
Xiaoyuan
Hou, Shu Yang, Guoaheng Dong, Xunming Ding, and Xun Wang
Phys. Rev. B33, 8015 (1987)
6. Chemical
and electronic properties of Ga on InP(100) surface.
Xun Wang,
Xiaofeng Jin, Mingren Yu, and Furong Zhu
Phys. Rev. B36, 7660 (1987).
7. Dangling
bond electronic state on InP(111) surface
Xiaoyuan
Hou, Guosheng Dong, Xunmin Ding, and Xun
Wang
Surface Sci. 183, 123 (1987).
8. The
adsorption of oxygen on alkali metal covered GaAs(111) surfaces.
Xunmin
Ding, Guosheng Dong, Xiaoyuan Hou, abd Xun
Wang
Solid
State
Commun. 61, 39 (1987).
9. A
missing row-dimer model of InP(100)(4X2) reconstruction as proposed by LEED,
UPS and HREELS studies.
Xiaoyuan
Hou, Guosheng Dong, Xunmin Ding, and Xun
Wang
J. Phys. C:
Solid
State
Phys. 20, L121 (1987).
10. Surface
reaction of sodium on InP(111) and its role on enhancement of water vapor
adsorption.
Guosheng
Dong, Xunmin Ding, Xiaoyuan Hou, and Xun
Wang
Surface Sci. 201, 531 (1988).
11. Investigation
of atomic and electronic structures of InP polar surfaces.
Xun Wang
Appl. Surface Sci. 33/34, 88 (1988).
12. A
simple method for the evaluation of the surface In atom dimerisation and
electronic states of the InP(100) surface.
Chunhui
Huang, Ling Ye, and Xun Wang
Semicond. Sci. Technol. 3, 169 (1988).
13. Application
of HREELS to Al/GaAs and Al/GaP interfaces
X.M.Ding,
G.S.Dong, X.K.Lu, X.Y.Hou, P.Chen, and X.Wang
Appl. Surface Sci. 41/42, 123 (1989).
14. Formation
of In/GaP(111) interface studied by energy loss spectroscopy, x-ray
photoelectron spectroscopy and ultraviolet photoelectron spectroscopy.
M.R.Yu,
P.Q.Wang, X.F.Jin, and X.Wang
J.Vac.Sci.Technol. B4,1014 (1990).
15. Surfac
adsorption properties of GaP(111) studied by XPS, UPS and HREELS.
H.Y.Xiao,
X.K.Lu, G.S.Dong, X.M.Ding, P.Chen, and Xun Wang
Physica Scripta, 41, 1037 (1990).
16. Surface
properties of Al0.7Ga0.3As(100) studied by XPS and ARUPS
G.S.Dong,
C.H.Huang, X.K.Lu, P.Chen, and Xun Wang
Vacuum, 41, 1058 (1990).
(2) Si表面
1. Thermal
desorption study of deuterium on Si(100) surface.
Hu
Jihuang, Chen Keming, Hu Xingen, Zhuang Chenqun, and Wang Xun
Chinese Phys. Lett. 2, 149 (1985).
2. Structural
model of Si(100)-c(4X4).
Hongchuan
Wang, Rongfu Lin, and Xun Wang
Phys. Rev. B36, 7712 (1987).
3. High
temperature nitridation structures of the Si(111)-(7X7) surface.
Hongchuan Wang, Rongfu Lin,
and Xun Wang
Surface Sci. 188, 199 (1987).
4. STM studies of ultrathin gate oxide
films grown on highly B-doped Si(100) substrates
Q. Cai, Y. F. Hu,
S. T. Hu, and X. Wang
J.
Vac. Sci. Technol. 18, 2384 (2000).
5. Characterization of silicon nitride
thin films on Si and overlayer growth of Si and Ge
Xue-sen
Wang, Z. Li, L. Wang, Y. Hu, G. Zhai, J. Yang, Y. Wang, K. Fung, J. Tang, Xun Wang, and Nelson Cue
Jpn. J. Appl. Phys. I, 40,
4292 (2001)
6. Nitridation
of Si(111)
X. S. Wang, G. Zhai, J. Yang, L. Wang, Y. Hu, Z. Li, J. C. Tang, X. Wang, K. K. Feng, and N. Cue
Surface
Sci. 494, 83 (2001)
7. Ge islanding
growth on nitridized Si and the effect of Sb surfactant
Yanfang Hu, Xue-sen Wang, Nelson Cue and Xun
Wang
J. Phys: Condens. Matter 14, 8939 (2002)
8. Resonant
photoemission from Si(001)
Gang
Chen, Xunmin Ding, Xun Wang, and Zheshen Li
Surf. Sci. 524, 137 (2003)
9. First-principles
study of the atomic and electronic structure of Pb on Si(001)
Y. Zhu, L. Ye,
and X. Wang
J. Appl. Phys. 100, 083703 (2006).
(3) GaN表面
1. Molecular-beam-epitaxy
growth of GaN on GaAs(100) by using reactive nitrogen source.
Z.Q.He,
X.M.Ding, X.Y.Hou, and Xun Wang
Appl. Phys. Lett. 64, 315 (1994).
2. Nitridation
of GaAs surfaces stimulated by nitrogen glow discharge.
Q.J.Xu,
X.M.Ding, X.Y.Hou, and Xun Wang
Appl. Surface Sci. 104/105, 468 (1996).
(4) GaAs表面的S钝化
1. The
electronic structure of (NH4)2Sx treated
GaAs(100) surface studied by UPS and XPS
X.F.Jin,
M.Y.Mao, Y.S.Luo, G.S.Dong, P.Chen, and Xun
Wang
Vacuum, 41, 1061 (1990).
2. Electrochemical
sulfur pasivation of GaAs.
X.Y.Hou,
W.Z.Cai, Z.Q.He, P.H.Hao, Z.S.Li, X.M.Ding, and Xun Wang
Appl. Phys. Lett. 60, 2252 (1992).
3. S2Cl2 treatment: a new sulfur passivation method of GaAs surface.
Z.S.Li,
W.Z.Cai, R.Z.Su, G.S.Dong, D.M.Huang, X.M.Ding, X.Y.Hou, and Xun Wang
Appl. Phys. Lett. 64, 3425 (1994).
4. Hot
wall epitaxial growth of ZnSe on S-passivated GaAs(100) substrates.
W.Z.Cai,
Z.S.Li, X.M.Ding, X.Y.Hou, J.Wang, C.S.Zhu, R.Z.Su, and Xun Wang
J. Cryst. Growth, 142, 397 (1994).
5. Raman
scattering characterization of the crystalline qualities of ZnSe films grown on
S-passivated GaAs(100) substrates
J.Wang,
X.H.Liu, Z.S.Li, R.Z.Su, Z.Ling, W.Z.Cai, X.Y.Hou, and Xun Wang
Appl. Phys. Lett. 67, 2043 (1995).
6. A
mild electrochemical sulfur passivation method for GaAs(100) surfaces.
Z.S.Li,
X.Y.Hou, W.Z.Cai, W.Wang, X.M.Ding, and Xun
Wang
J. Appl. Phys. 78, 2764 (1995).
7. Passivation
of GaAs surface by sulfur glow discharge.
Xiaoyuan
Hou, Xiying Chen, Zheshen Li, Xunming Ding, and Xun Wang
Appl. Phys. Lett. 69, 1429 (1996).
8. X-ray
photoelectron spectroscopic studies of sulphur-passivated GaAs surfaces.
X.Wang, X.Y.Hou, Z.S.Li and X.Y.Chen
Surf. Interface Anal. 24, 564 (1996).
9. Passivation
of GaAs/AlGaAs heterojunction bipolar transistors by S2Cl2 solution
X.A.Cao,
X.Y.Hou, X.Y.Chen, Z.S.Li, R.Z.Su, X.M.Ding, X.Wang
Appl. Phys. Lett. 70, 747 (1997).
10. Gallium
sulfide thin film grown on GaAs(100) by microwave glow discharge.
X.Y.Chen,
X.Y.Hou, X.A.Cao, X.M.Ding, and Xun Wang
J. Cryst. Growth, 173, 51 (1997)
11. Synchrotron
radiation photoemission study of S-passivated GaAs surfaces
X.M.Ding,
Z.L.Yuan, H.T.Hu, Z.S.Li, Y.F.Chen, X.Y.Chen, X.A.Cao, X.Y.Hou, Xun Wang, E.D.Lu, S.H.Xu, P.S.Xu,
X.Y.Zhang
Nuclear Instru. & Methods, B133, 90
(1997).
(5) SiC表面
1. Atomic structural model of (2Ö3
× 2Ö3)-R30o reconstruction for
3C
-Si(111)
crystallized islands on Si(111) by C60 precursor
Jian-shu
Yang, Xue-sen Wang, G.B.Zhui, Nelson Cue, and Xun Wang
Surface Sci. 476, 1
(2001)
2. Self-assembled growth of cubic
silicon carbide nano-islands on silicon
Jianshu Yang, Xuesen Wang, Guangjie Zhai, Nelson Cue, and Xun Wang
J. Cryst. Growth 224, 84
(2001)
3. Atomic
and electronic structures of
3C
-SiC(111)-(2Ö3´2Ö3)–R30°
surface reconstruction
Xiang-yang
Peng, Xun Wang, and Ling Ye
Surf. Sci. 501,
125 (2002).
4. Theoretical study of hydrogenated
3C
-SiC(001)-(2×1)
surface
Xiangyang
Peng, Ling Ye, and Xun Wang
Surf.
Sci. 571, 21 (2004)
5. Carbon induced (Ö3 ´ Ö3)R30°reconstruction on Si(111) surface: a
theoretical study
Xiangyang
Peng, Ling Ye, and Xun Wang
Surf. Sci. 548, 51 (2004)
6. A new atomic structural
model for SiC(0001)(3×3) reconstruction based on the first principles study
Yun
Li, Ling Ye, and Xun Wang
Surf.
Sci. 600, 298 (2006).
7. The structure
models for the (2Ö3×2Ö3)-R30o reconstructions of SiC(111) and 6H-SiC(0001) surfaces
Yun Li, Xun Wang, and Ling Ye
J. Phys.-Conden. Matt. 18, 6953 (2006).
II. 硅锗量子阱和超晶格
1. Growth
and characterization of Si molecular beam epilayer on GaP(111) substrates.
Weidong
Jiang, Guoliang Zhou, Keming Chen, Chi Sheng, Xiangjiu Zhang, and Xun Wang
Appl. Phys. Lett. 51, 1910 (1987).
2. Heteroepitaxial
growth of Ge film on Si substrates by molecular beam epitaxy.
G.L.Zhou,
K.M.Chen, W.D.Jiang, C.Sheng, X.J.Zhang, and Xun Wang
Appl. Phys. Lett. 53, 2179 (1988).
3. The
interface electronic states and valence band offsets of the Si/GaP heterojunction.
Chunhui
Huang, Ling Ye, and Xun Wang
J. Phys.: Condens. Matt. 1, 907 (1989).
4. RHEED
intensity oscillation of MBE grown Si/Ge ultrathin multilayered structures.
Xun Wang,
K.M.Chen, G.L.Gin, C.Sheng, G.L.Zhou, W.D.Jiang, X.J.Zhang, and M.R.Yu
Surface Sci. 228, 334 (1990).
5. Highly
flat GexSi1-x/Si heterointerfaces grown by molecular beam epitaxyin
two-dimensional growth mode.
X.Wei,
G.L.Zhou, T.C.Zhou, C.Sheng, M.R.Yu, and Xun
Wang
Vacuum, 43, 1035 (1992).
6. Suppression
of interfacial boron accumulation and defect density in molecular beam
epitaxial silicon.
D.W.Gong,
X.Wei, F.Lu, Q.H.Wang, H.H.Sun, and Xun
Wang
Solid
State
Commun. 88, 731 (1993).
7. An
investigation on the thermal stability of the GexSi1-x superlattice grown by
MBE.
G.L.Zhou,
X.J.Zhang, C.Sheng, and Xun Wang
J. Cryst. Growth, 127, 456 (1993).
8. Interfacial
defects in Si1-xGex/Si quantum well detected by deep level transient
spectroscopy.
Qinhua
Wang, Fang Lu, Dawei Gong, Jianbao Wang, Henghui Sun, and Xun Wang
Phys. Rev. B50, 18226 (1994).
9. Single-frequency
admittance spectroscopy measurement of band offset in a Si/Si1-xGex quantum
well.
Fang
Lu, Jiayu Jiang, Henghui Sun, Dawei Gong, and Xun Wang
J. Appl. Phys. 75, 2957 (1994).
10. Effects
of rapid thermal annealing on electrical properties of heavily doped silicon
molecular beam epitaxial layer with B2O3 doping source.
Qiang
Xu, Jian Yuan, Jianbao Wang, Daming Huang, Fang Lu, Henghui Sun, Xun Wang, and Rong Liu
J. Appl. Phys. 76, 1697 (1994).
11. Interfacial
defects related to the substrate treat in the molecular beam epitaxial silicon.
Chi
Sheng, Dawei Gong, Xing Wei, Fang Lu, Qinhua Wang, Henghui Sun, and Xun Wang
Jpn. J. Appl. Phys. 33, 2276 (1994).
12.
Rutherford
backscattering research on the strained
SiGe/Si structure.
J.H.Hu,
Y.L.Fan, D.W.Gong, X.Wang, and
Z.T.Zhou
Solid
State
Commun. 92, 963 (1994).
13. Electroreflectance
study of strained layer GexSi1-x/Si multiple quantum
wells.
Shihong
Pan, Shuo Huang, Wei Chen, Cunzhou Zhang, Chi Sheng, and Xun Wang
Chin. Phys. Lett. 11, 119 (1994).
14. Si1-xGex/Si
single-mode rib waveguides with 0.5dB/cm loss by molecular beam epitaxy.
Yong
Gao, Enke Liu, Guozheng Li, Xiding Liu, Xiangjiu Zhang, Xuekun Lu, and Xun Wang
Chin. Phys. Lett. 11, 734 (1994).
15. Quantum
confinement of holes in Si1-xGex/Si quantum wells studied by admittance
spectroscopy.
F.Lu,
J.Y.Jiang, H.H.Sun, D.W.Gong, X.J.Zhang, and Xun Wang
Phys. Rev. B51, 4213 (1995).
16. Admittance
spectroscopy studies of boron delta-doped Si quantum wells.
Jianhong
Zhu, Dawei Gong, Bo Zhang, Fang Lu, Chi Sheng, Henghui Sun, and Xun Wang
Phys. Rev. B52, 8959 (1995).
17. Photovoltaic
investigation of interband transitions in SiGe/Si multiple quantum well
J.B.Wang,
D.W.Gong, F.LU, H.H.Sun, and Xun Wang
Appl. Phys. Lett. 66, 1782 (1995).
18. Si1-xGex/Si
asymmetric 2X2 electro-optical switch of total internal reflection type.
Yong
Gao, Xiding Liu, Guozheng Li, Enke Liu, Xiangjiu Zhang, Xuekun Lu, Jihuang Hu,
and Xun Wang
Appl. Phys. Lett. 67, 3379 (1995).
19. Detection
of defects at homoepitaxial interface by deep-level transient spectroscopy
F.Lu,
D.W.Gong, H.H.Sun, and Xun Wang
J. Appl. Phys. 77, 213 (1995).
20. Effect
of rapid thermal annealing on the strain relaxation in heavily boron doped
silicon epitaxial layer.
J.B.Wang,
Q.Xu, J.Yuan, F.Lu, H.H.Sun, and Xun Wang
J. Appl. Phys. 77, 2974 (1995).
21. Molecular
beam epitaxial growth of Ge on Si(111) substrates covered by a SiO2 mask.
Xiangjiu
Zhang, Hongqiang Lu, Dawei Gong, Xuekun Lu, Xiangjun Chen, Jihuang Hu, Weining
Huang, Yongliang Fan, and Xun Wang
J. Cryst. Growth, 150, 964 (1995).
22. Hole
confinement in boron delta-doped Si quantum wells studied by admittance
spectroscopy.
Jianhong
Zhu, Dawei Gong, Bo Zhang, Fang Lu, Chi Sheng, Henghui Sun, and Xun Wang
J. Cryst. Growth, 157, 378 (1995).
23. SiGe/Si
bifurcation optical active switch based on plasma dispersion effect.
Y.Gao,
G.Z.Li, X.D.Liu, E.K.Liu, X.J.Zhang, X.K.Lu, J.H.Hu, and Xun Wang
Electron. Lett. 31, 1740 (1995).
24. Capacitance-voltage
chacteristics of a Schottky junction containing SiGe/Si quantum wells.
Fang
Lu, Dawei Gong, Jianbao Wang, Qinhua Wang, Henghui Sun, and Xun Wang
Phys. Rev. B53, 4623 (1996).
25. Interface
broadening and Raman scattering in SiGe/Si superlattices.
Xiaohan
Liu, Daming Huang, Zuimin Jiang, and Xun
Wang
Phys. Rev. B53, 4699 (1996).
26. Suppression
of Si-Ge interfacial vibration mode in Raman spectrum of Si6Ge4 superlattice.
Chi
Sheng, Tichen Zhou, Qun Cai,Dawei Gongm Mingren Yu, Xiangjiu Zhang, and Xun Wang
Phys. Rev. B53, 10771 (1996).
27. Crystalline
quality of Si epilayers influenced by Sb doping
Xuekun
Lu, Zuiming Jiang, Daming Huang, Haijun Zhu, Xiangjiu Zhang, and Xun Wang
J. Cryst. Growth,158,169 (1996).
28. Photoluminescence
from trapped exitons in Si1-xGex/Si quantum well
structures.
Xiaohan
Liu, Daming Huang, Zuimin Jiang, Xuekun Lu, Xiangjiu Zhang, and Xun Wang
J. Phys.: Conden. Mat. 8, 3947 (1996).
29. Observation
of boron doping induced surface roughening in silicon molecular beam epitaxy.
Xuekun
Lu, Zuimin Jiang, Haijun Zhu, Xiangjiu Zhang, and Xun Wang
Appl. Phys. Lett. 68, 3278 (1996).
30. Hole
confinement in boron delta-doped silicon quantum wells studied by deep level
transient spectroscopy.
J.H.Zhu,
D.W.Gong, B.Zhang, F.Lu, C.Sheng, H.H.Sun and Xun Wang
Phys. Rev. B54, 2662 (1996).
31. Photoabsorption
and photoresponse behaviors of Si1-xGex/Si quantum wells.
Yu
Yang, Dawei Gong, Xingliang Huang, Xiaohong Shi, Chi Sheng, and Xun Wang
Solid
State
Commun. 97, 627 (1996).
32. Analysis
of capacitance-voltage characteristics of Si1-xGex/Si quantum well structures.
J.B.Wang,
F.Lu, S.K.Zhang, B.Zhang, D.W.Gong, H.H.Sun, and Xun Wang
Phys. Rev. B54, 7979 (1996).
33. Coevaporative
Sb doping and crystalline quality in Si molecular beam epitaxy.
Xuekun
Lu, Zuimin Jiang,
Kaifeng
Liu, Haijun Zhu, Xiangjiu Zhang, and Xun
Wang
J. Cryst. Growth, 158, 169 (1996).
34. A deep
level transient spectroscopic study of boron-ion-implanted SiGe/Si single
quantum wells.
Fang
Lu, Jianbao Wang, Jiayu Jiang, Dawei Gong, Henghui Sun, and Xun Wang
J. Phys. Condens. Matter, 9, 3427 (1997).
35. Extremely
narrow Sb Delta-doped epitaxial layer characterixed by X-ray reflectivity
Jiang
Zuimin, Xiu Lisong, Jiang Xiaoming, Zheng Wenli, Lu Xuekun, Zhu Haijun, Zhang
Xiangjiu, Wang Xun
Chin. Phys. Lett. 14, 686 (1997).
36. Ge dots with highly uniform size distribution
grown on Si substrate by molecular beam epitaxy
Xun Wang, Z.M.Jiang, H.J.Zhu, F.Lu,
D.M.Huang, X.H.Liu, C.W.Hu, Y.F.Chen, Z.Q.Zhu, and T.Yao
Appl. Phys. Lett.71, 3543 (1997).
37. A silicon-based low dimensional quantum
structure--self-assembly grown germanium quantum dots.
Z.M.Jiang,
H.J.Zhu, F.Lu, D.M.Huang, Xun Wang,
Y.F.Chen, Z.Q.Zhu, and T.Yao
Nonlinear Optics 18, 73 (1997).
38.
Surfactant influence on the Ge heteroepilayer on Si(001) studied by x-ray
diffraction and atomic force microscopy.
Haijun Zhu,
Zuimin Jiang, Amei Xu, Chunming Mao, Dongzhi Hu, Xiaohan Liu, Daming Huang,
Xiangjiu Zhang, Xun Wang, Jielin
Sun, and Minqian Li
J. Cryst. Growth, 179,115(1997).
39. Monolithic integration of SiGe/Si modulator and multiple quantum well
photodetector for
1.55m
m
operation
Baojun Li, Guozheng Li, Enke Liu, Zuimin Jiang, J.Qin, Xun Wang
Appl. Phys. Lett. 73,
3504 (1998).
40. Well depth fluctuation of Si1-x Gex/Si quantum-well structures studied by conductance-voltage
technique
Sheng-kun
Zhang, Zui-min Jiang, Jie Qin, Dong-zhi Hu, Fang Lu, and Xun Wang
J. Appl. Phys. 84, 5587
(1998)
41. Effect
of layer thickness variation on light scattering by longitudinal accoustic
phonons in SiGe/Si superlattices.
X.H.Liu,
D.M.Huang, X.J.Wang, H.J.Zhu, and Xun
Wang
Thin Solid Films, 321, 163 (1998)
42. Effect of Sb as surfactant on the diffusion
of epilayer Ge atoms into Si subsrtrate.
Xu,
Z.Jiang, H.Zhu, X.Liu, D.Hu, X.Wang, M.Mao, X.Zhang, J.Hu, D.Huang, and Xun Wang
Thin Solid Films, 321, 116 (1998)
43. Self-organized germanium quantum dots grown
by molecular beam epitaxy on Si(100).
Xun Wang,
Z.M.Jiang, H.J.Zhu, F.Lu, J.Qin, D.M.Huang, Y.F.Chen, Z.Q.Zhu, and T.Yao
Thin Solid Films, 321, 60 (1998)
44. Near band-edge photoluminescence in strined
and relaxed Si1-xGex/Si quantum wells.
Y.Yang,
S.Jiang, Z.Tian, X.Wu, C.Sheng, and Xun
wang
Jpn. J. Appl. Phys. 37,
4A
, 1884 (1998).
C.Sheng, F.Lin,
D.Gong, J.Wan, Y. Fan, and X.Wang
Jpn. J. Appl. Phys. 37, 3B, 1206 (1998).
S.K.Zhang,
H.J.Zhu, F.Lu, Z.M.Jiang, and Xun Wang
Phys. Rev. Lett. 80, 3340 (1998).
47.
Strong surface segregation of Sb atoms at low temperatures durning Si molecular
beam epitaxy.
Z.M.Jiang,
C.W.Pei, L.S.Liao, X.F.Zhou, X.J.Zhang, Xun
Wang, Q.J.Jia, X.M.Jinag, Z.H.Ma, Terry Smith, I.K.Sou
Thin Solid Films, 336,
236 (1998).
48. Strain relaxation by alloying effects in Ge
islands grown on Si (001)
X.
Z. Liao, J. Zou, D. J. H. Cockayne, J. Qin, Z. M. Jiang, X. Wang, and R. Leon
Phys. Rev. B 60,
15605 (1999).
49.
Conductance-voltage chacteristics of SiGe/Si quantum-well structures.
F.Lu,
S.K.Zhang, Z.M.Jiang, J.Qin, D.Z.Hu, and X.Wang
J. Korean Phys. Soc. 34, S73, (1999).
50. Low-loss
1´2
multimode interference wavelength demultiplexer in silicon-germanium alloy
Baojun
Li , Guozheng Li , Enke Liu , Zuimin Jiang , Jie Qin , and Xun Wang
IEEE Photonics
Technol. Lett. 11, 575 (1999)
51. Study of strain in partially relaxed Ge
epilayers on Si(100) substrate
Z.M.Jiang, C.W.Pei, X.F.Zhou,
W.R.Jiang, B.Shi, X.H.Liu, Xun Wang,
Q.J.Jia, W.L.Zheng, and X.M.Jiang
Appl. Phys. Lett. 75,
370 (1999).
52. 1.55 μm
reflection-type optical waveguide switch based on SiGe/Si plasma dispersion
effect.
Baojun
Li, Guozheng Li, Enke Liu, Zuimin Jiang, Chengwen Pei, and Xun Wang
Appl. Phys. Lett. 75, 1 (1999)
53. SiGe/Si Mach-Zehnder interferometer modulator based
on the plasma dispersion effect
Baojun Li ,
Zuimin Jiang , Xiangjiu Zhang , Xun
Wang, Jianjun Wan , Guozheng Li , and Enke Liu
Appl. Phys. Lett.
74, 2108 (1999).
54. Integration of Wavelength Signal Divider and
Infrared Photodetectors Based on Plasma Dispersion Effect in SiGe/Si
Bao-jun
Li, Zui-min Jiang, Cheng-wen Pei, Jie Qin, Xun
Wang, Guo-zheng Li, Jian-jun Wan, and En-ke Liu
Appl. Phys. Lett. 74, 1663
(1999)
55. Thermal stability of
Si/Si1-xGex quantum well studied by admittance
spectroscopy.
Feng
Lin, Lian Ke, Chi Sheng, Da-wei Gong, Fang Lu, and Xun Wang
J.
Appl. Phys. 87, 1947 (2000).
56. Coulomb Charging
Effect of Holes in Ge Quantum Dots Studied by Deep Level Transient
Spectroscopy.
Sheng-kun
Zhang, Fang Lu, Zui-min Jiang, and Xun
Wang
Thin
Solid Films, 369, 65 (2000).
57. Boron-mediated growth of Ge quantum dots on
Si(100) substrate.
Xingfei Zhou, Bin Shi, Zuimin
Jiang, Weirong Jiang, Dongzhi Hu, Dawei Gong, Yongliang Fan, Xiangjiu Zhang, Xun Wang, Yuesheng Li
Thin
Solid Films, 369, 92 (2000).
58. Y-branch 1.3/
1.55 m
wavelength demultiplexer based on the plasma
dispersion effect
Baojun Li, Jianjun Wan,
Guozheng Li, Zuimin Jiang, Enke Liu, Xun
Wang
Thin
Solid Films, 369, 419 (2000).
59. Composition and its impact on shape evolution
in Ge(Si)/Si islands
X.
Z. Liao, J. Zou, D. J. H. Cockayne, J. Qin, Z. M. Jiang, X. Wang, and R. Leon
Appl. Phys. Lett. 77, 1304 (2000).
60. Extracting
composition and alloying information of coherent Ge(Si)/Si(001) islands from
[001] on-zone bright-field diffraction contrast images
X.
Z. Liao, J. Zou, D. J. H. Cockayne, Z. M. Jiang, and X. Wang
Appl. Phys. Lett. 77, 1304 (2000).
61. Optical absorption in SiGe/Si quantum well structures created by
subband transitions
Y. Yang, X. Mao, H.W. Yang,
W. Zhou, Z.L. Zhou, H. L. Liu, and Xun
Wang
Chin.
Phys. Lett. 18, 1655 (2001)
62. Growth of Ge quantum dots on vicinal Si(001) substrate by solid phase
epitaxy
D. Z. Hu, D. T. Zhao, W. R. Jiang, Z. M. Jiang, Y. L. Fan, and X.
Wang
J. Cryst. Growth 236,
557 (2002)
III. 硅基光电子材料
(1) 多孔硅
1. Efficient
infrared-upconversion in porous silicon: a quantum-confinement induced effect.
J.Wang,
H.B.Jiang, W.C.Wang, J.B.Zheng, F.L.Zhang, P.H.Hao, X.Y.Hou, and X.Wang
Phys. Rev. Lett. 69, 3252 (1992).
2. Pinning
of photoluminescence peak positions for light-emitting porous silicon: an
evidence of quantum size effect.
Xun Wang,
D.M.Huang, L.Ye, M.Yang, P.H.Hao, H.X.Fu, X.Y.Hou, and X.D.Xie
Phys. Rev. Lett. 71, 1265 (1993).
3. Anisotropy
of infrared-upconversion luminescence generation in porous silicon.
J.Wang,
H.B.JIang, W.C.Wang, J.B.Zheng, F.L.Zhang, P.H.Hao, X.Y.Hou, and Xun Wang
Phys. Rev. B48, 5653 (1993).
4. Large
blue shift of light emitting porous silicon by boiling water trearment.
X.Y.Hou,
G.Shi, W.Wang, F.L.Zhang, P.H.Hao, D.M.Huang, and Xun Wang
Appl. Phys. Lett. 62, 1097 (1993).
5. Critical
conditions for achieving blue light emitting from porous silicon.
Xun Wang,
G.Shi, F.L.Zhang, H.J.Chen, W.Wang, P.H.Hao, and X.Y.Hou
Appl. Phys. Lett. 63, 2363 (1993).
6. Improvement
of electroluminescence properties of light-emitting porous silicon.
F.L.Zhang,
P.H.Hao, G.Shi, X.Y.Hou, D.M.Huang, and Xun
Wang
Semicond. Sci. Technol. 8, 2015 (1993).
7. Study
of the Raman peak shift and linewidth of light-emitting porous silicon.
Min
Yang, Daming Huang, Pinghai Hao, Fulong Zhang, Xiaoyuan Hou, and Xun Wang
J. Appl. Phys. 75, 651 (1994).
8. Transient
electroluminescence behavior and mechanism of a Schottky-type porous silicon
doide.
Jian
Wang, Fulong Zhang, Wencheng Wang, Jiabiao Zheng, Xiaoyuan Hou, and Xun Wang
J. Appl. Phys. 75, 1070 (1994).
9. Luminescence
behavior and mechanism of light-emitting porous silicon.
Xun Wang
Modern Physics Letters, B8, 69 (1994).
10. Temperaturedependent
picosecond time-resolved carrier dynamics in visible light-emitting porous
silicon.
Jian
Wang, Wencheng Wang, Jiabiao Zheng, Fulong Zhang, Xiaoyuan Hou, Xun Wang, Hezhou Wang, and Xiguang
Zheng
Solid
State
Commun. 88, 795 (1994).
11. Energy
band lineup at the porous silicon/ silicon heterointerface measured by electron
spectroscopy.
P.H.Hao,
X.Y.Hou, F.L.Zhang, and Xun Wang
Appl. Phys. Lett. 64, 3602 (1994).
12. Optical
study of photon-trapped porous silicon.
Liangyao
Chen, Xiaoyuan Hou, Daming Huang, Pinghai Hao, Fulong Zhang, Xingwei Feng,Youhua
Qian, and Xun Wang
Jpn. J. Appl. Phys. 33, 1937 (1994).
13. Origin
of multiple-peak photoluminescence spectra of light-emitting porous silicon
Xun Wang,
Pinghai Hao, Daming Huang, Fulong Zhang, Min Yang, and Mingren YU
Phys. Rev. B50, 12230 (1994).
14. Passivation
of porous silicon by wet thermal oxidation.
Huajie
Chen, Xiaoyuan Hou, Gubo Li, Fulong Zhang, Mingren Yu, and Xun Wang
J. Appl. Phys. 79, 3282 (1996).
15. Pulse anodic etching: an effective method of
preparing light-emitting porous silicon.
Xiao-yuan
Hou, Hong-lei Fan, Lei Xu, Fu-long Zhang, Ming-ren Yu, and Xun Wang
Appl. Phys. Lett. 68, 2323 (1996).
16. Transient
photovoltaic investigation of a Schottky-type porous silicon diode.
Shiyou
Zhao, Xingze Lu, Fulong Zhang, Hongbing Jiang, Wencheng Wang, Xiaoyuan Hou, and
Xun Wang
J. Phys. D: Appl. Phys. 29, 1326 (1996).
17. Passivation
of light-emitting porous silicon by rapid thermal treatment in NH3.
G.
Li, X.Hou, S.Yuan, H.Chen, F.Zhang, H.Fan, and Xun Wang
J.Appl. Phys. 80, 5967 (1996).,
18. Stable
and intense blue-green emission in porous silicon achieved by amine immersion
and rapid thermal oxidation
Gu-bo
Li, Liang-sheng Liao, Xiao-bing Liu, Xiao-yuan Hou, and Xun Wang
Appl. Phys. Lett. 70,1284 (1997).
19.
Photoluminescence studies of porous silicon microcavities
Z.
H. Xiong , S. Yuan , Z. M. Jiang , J. Qin , C. W. Pei, L. S. Liao* , X. M. Ding
, X. Y. Hou , Xun Wang
J. Lumin. 80, 137
(1999)
20. Luminescent
erbium-doped porous silicon bilayer structures
Lanlan
Gu, Zhuhong Xiong, Gang Chen, Zhisong Xiao, Daiwei
Gong, Xiaoyuan Hou, and Xun Wang
Adv. Mater. 13, 1402 (2001)
(2) PBG
1. Defective
photonic crystals with greatly enhanced second harmonic generation
B.
Shi, Z. M. Jiang, and Xun Wang
Opt. Lett. 26, 1194 (2001)
2. Silicon-based
photonic crystal heterostructure
Z.
M. Jiang, B. Shi, D. T. Zhao, J. Liu, and Xun
Wang
Appl.
Phys. Lett. 79, 3395 (2001)
3. A nonlinear photonic crystal
structure with extraordinary high efficiency for third-harmonic generation
Bin
Shi, and Xun Wang
Appl.
Phys. Lett. 80, 3667 (2002)
4. A two-dimensional nonlinear
photonic crystals for strong second harmonic generation
B.
Shi, Z. M. Jiang, X. F. Zhou, and X.
Wang
J. Appl. Phys. 91, 6769 (2002)
5. A
Silicon-based optical waveguide polarizer using photonic band gap
Dengtao
Zhao, Bin Shi , Zuimin Jiang, Yongliang Fan, and Xun Wang
Appl.
Phys. Lett. 81, 409 (2002).
6. Optical delay in defective photonic
band-gap structures
Jian Liu, Bin Shi, Dengtao
Zhao and Xun Wang
J. Opt. A: Pure Appl. Opt. 4, 636 (2002)
7. Fabrication and performance of a
medium dependent SiO2/Si photonic heterostructure device
D.
T. Zhao, H. Zhou, Z. M. Jiang, Y. L. Fan, and Xun Wang
Opt.
Lett. 28, 843 (2003)
(3) Er/Si
1. The role of codopant oxygen in
erbium doped silicon.
Jun
Wan, Ling Ye, Qiang Sun, and Xun Wang
Phys. Rev.B58, 10415 (1998)
2. Visible and infrared photoluminescence
from Er doped SiOx
J.
Wan, C. Sheng, F. Lu, S. Yuan, D. W. Gong, L. S. Liao, Y. L. Fang, F. Lin and X. Wang
J. Lumin. 80, 369
(1999)
3. X-ray reflectivity measurement of
delta-doped erbium profile in silicon molecular beam epitaxial layer
J.Wan, Z.M.Jiang,
D.W.Gong, Y.L.Fan, C.Sheng, Xun Wang, Q.J.Jin, W.L.Zheng, and X.M.Jiang
Phys. Rev. B59,
10697 (1999)
4. Erbium-doped silicon-rich SiO2/Si
thin films fabricated by metal vapor vacuum arc ion source implanation
Fei
Xu, Zhisong Xiao, Guoan Cheng, Zhongzhen Yi, Tonghe Zhang, Lanlan Gu, and Xun Wang
J. Phys.: Conden. Matt. 14, L63 (2002).
5. High
concentration erbium doping of silicon-rich SiO2 thin films on
silicon
Fei
Xu, Zhisong Xiao, Guoan Cheng, Zhongzhen Yi, Tonghe Zhang, Lanlan Gu and Xun
Wang
Thin Solid Films 410,
94 (2002).
6. Surface structures of erbium
silicide ultra thin films formed by solid phase epitaxy on Si(100)
Gang Chen, Jun Wan, Jianshu Yang, Xunming Ding, Ling Ye, and Xun Wang
Surf. Sci. 513, 203 (2002)
7. Photoemission study on the initial
stage of Er/Si(100) interface formation
Gang Chen, Xunmin Ding, Zheshen Li, and Xun Wang
J.
Phys: Condens. Matter 14, 10075 (2002)
8. The strong correlation of
4f
electrons of erbium in silicon
Yu Fu, Zhong Huang, Xun Wang, and Ling
Ye
J.
Phys. Condens. Matter 15, 1437 (2003)
IV. 其他
(1) II-VI族半导体
1. Quality
of ZnSe/GaAs epilayers studied by spatial correlation model of Raman
scattering.
J.Wang,
W.H.Yao, J.B.Wang, H.Q.Liu, H.H.Sun, Xun
Wang, and Z.L.Pang
Appl. Phys. Lett. 62, 2854 (1993).
2. Hot
wall epitaxial growth and characterization of diluted magnetic semiconductor
Zn1-xMnxSe.
J.Wang,
Aziz-Ul-Haq Qureshi, Y.S.Tian, Xun Wang,
Y.Hu, and S.D.Zheng
J. Cryst. Growth, 126, 651 (1993).
3. Optical
chacterization of ZnSe/ZnSSe superlattices pseudomorphically grown on GaAs(100)
substrates by molecular beam epitaxy.
J.Wang, X.Wang, Z.Q.Zhu, and T.Yao
J. Appl. Phys. 77, 2709 (1995).
4. Structural
chacteration of diluted magnetic semiconductor ZnMnSe films grown by hot wall
epitaxy on GaAs(100) substrates.
J.Wang,
C.S.Zhu, A.U.Qureshi, D.M.Huang, X.Wang,
and X.L.Shen
J. Cryst. Growth, 152, 286 (1995).
5. Effects
of quantum confinement and strain in Zn1-xCdxSe/ZnSe
strained-layer superlattices
J.Wang, Xun Wang, Z.Q.Zhu, and T.Yao
J. Phys.: Condens. Matt. 7, 5835 (1995).
6. Optical
studies on epitaxy films and superlattices of diluted magnetic semiconductor
Zn1-xMnxSe
Xuezhong
Wang, Xi Chen, Jizhou Liu, Chenjia Chen, Jie Wang, Zhen Ling, Xun Wang, Shumei Wang, and Shaozhe Lu
Solid
State
Commun. 95, 525 (1995).
7. Crystal
structure and Raman scattering in Zn1-xMgxSe alloys.
Daming
Huang, Caixia Jin, Donghong Wang, Xiaohan Liu, Jie Wang, and Xun Wang
Appl. Phys. Lett. 67, 3611 (1995).
8. Determination
of Mn composition in Zn1-xMnxSe from Faraday rotation analysis.
Y.X.Zhang,
L.Y.Chen, S.M.Zhou, Y.D.Wang, Y.Wang, Y.H.Qian, J.Wang, C.X.Jin, and X.Wang
J. Appl. Phys. 79, 5193 (1996).
9. Raman
spectra of Zn1-xMgxSySe1-y quaternary alloys.
Donghong
Wang, Daming Huang, Caixia Jin, Xiaohan Liu, Zheng Lin, Jie Wang, and Xun Wang
J. Appl. Phys. 80, 1248 (1996).
10. Deep
level transient spectroscopic studies of ZnSe/GaAs heterointerfaces
F.Lu,
S.K.Zhang, J.Wang, Z.S.Li, L.Ke, J.B.Wang, H.H.Sun, and X.Wang
J. Phys.: Cond. Matt.9, 995 (1997).
11. Raman scattering from ZnSe1-xTex alloy grown on
GaAs(100) by molecular beam epitaxy
Z.Ling, J.Wang,
C.X.Jin, D.H.Huang, D.M.Huang, X.Y.Hou, and X.Wang
Nonlinear Optics
18, 231 (1997).
12.
Growth and optical characterization of dileted magnetic semiconductor
Zn1-xMnxSe/ZnSe strained-layer superlattices
C.Jin, B.Zhang,
Z.Ling, J.Wang, X.Hou, Y.Segawa, and Xun
Wang
J. Appl. Phys. 81, 5148 (1997).
13.
Phonon modes of ZnS1-xTex alloys epitaxially grown on
(100) GaAs substrate
C.X.Jin, Z.Ling,
D.H.Wang, D.M.Huang, X.Y.Hou, and Xun
Wang
J. Appl. Phys. 81,3465 (1997).
14. Lateral magnetoresistances of epitaxial ZnSe
and CdMnTe thin films measured by microwave contactless method.
Zongxin Wang,
Youling Chu, Zhen Ling, Caixia Jin, Jie Wang, Xiaoyuan Hou, and Xun Wang
J.Appl.Phys.82, 477(1997)
15. A photovoltaic study of ZnSe/GaAs
heterostructures.
J.B.Wang,
D.Y.Chen, C.Y.Jin, F.Lu, H.H.Sun, and X.Wang
Phys. Rev. B56, 1416(1997)
16. Structural and optical properties of Zn1-xMgxSe
alloys grown on GaAs(001) substrates by molecular beam epitaxy
Daming
Huang, Xingjun Wang, Yanfeng Wei, Xiaohan Liu, Jie Wang, Xun Wang,Zhanghai Chen, Wei Lu.
J. Cryst. Growth 184/185, 1085 (1998).
17. High efficient biexciton photoluminescence
observed from single ZnCdSe quantum wells with continuous wave cold carrier
generation
Y.
Wei, D. Huang, X. J. Wang, G. Yu, C. S. Zhu, and X.Wang
Appl. Phys. Lett. 74, 1138 (1999).
(2) Mn/GaAs
1. Magnetic
ordering of Mn overlayer on GaAs(100).
X.Jin,
M.Zhang, G.S.Dong, Y.Chen, M.Xu, X.G.Zhu, Xun
Wang, E.D.Lu, H.B.Fan, P.S.Xu, X.Y.Zhang, and C.Y.Fan
Phys. Rev. B50, 8047(1994).
2. Stabilization
of fcc Mn films via epitaxial growth on GaAs(001).
X.Jin,
M.Zhang, G.S.Dong, M.Xu, Y.Chen, Xun
Wang, X.G.Zhu, and X.L.Shen
Appl. Phys. Lett. 65, 3078 (1994).
3 Synchrotron-radiation
study of the electronic structure of fcc Mn thin films grown on a GaAs(001)
surface.
X.Jin,
Y.Chen, G.S.Dong, M.Zhang, M.Xu, X.G.Zhu, Xun
Wang, E.D.Lu, H.B.Pan, P.S.Xu, X.Y.Zhang, and C.Y.Fan
Phys. Rev. B51, 9702 (1995).
4. XPS
study of Mn thin films grown on GaAs(001) surfaces.
G.S.Dong,
M.Xu, Y.Chen, X.F.Jin and X.Wang
Surf. Interface Anal. 24, 653 (1996).
5. Interface
structure of fcc Mn on GaAs(001).
X.Jin,
Y.Chen, Y.Chen, X.W.Lin, G.S.Dong, Y.Chen, M.Xu, W.R.Zhu, Xun Wang, X.L.Shen, L.Li
Appl. Phys. Lett. 70, 2455 (1997).
(3)
1. Interface composition studies of
thermally oxidized GaAs using Auger depth profiling
Xun
Wang, Arturo Reyes-Mena, and David Lichtman
J.
Electrochem. Soc. 129, 851 (1982).
2. Determination of the atomic concentration
rario on InP(100) clean surfaces by x-ray photoelectron spectroscopy.
Yu Mingren, Yang
Guang, and Wang Xun
Chinese Physics, 4, 10 (1984).
3. The UPS study of GaAs(100) surface
(4X1) structure.
Xu Yabuo, Dong
Guosheng, Ding Xunmin, Yang Shu, and Wang
Xun
Chinese Physics, 4, 547 (1984).
4. Experimantal observation of optical
surface phonons for GaAs(100) and InP(100) surfaces.
Ding Xunmin, Dong
Guosheng, Yang Shu, Wang Xun, and Xu
Yabuo
Chinese Physics, 4, 186 (1984).
5. Work function change of hydrigen
chemisorbed Si(100) surface.
Chen Binglai,
Zhuang Chenqun, and Wang Xun
Chinese Physics, 4, 189 (1984).
6. The effect of sodium adlayers on
the adsorption of oxygen on Ag(100).
Eric Garfunkel,
Ding Xunmin, Dong Guosheng, Yang Shu, Hou Xiaoyuan, and Wang Xun
Chinese Phys. Lett. 2, 397 (1985).
7. An interfacial analysis of
MoNb-GaAs Schottky barrier diodes.
Yu Mingren, Zhu
Furong, and Wang Xun
Chinese Physics, 5, 1040 (1985).
8. Faceted structures studied by low
energy electron diffraction--its application to III-V compound semiconductors.
Chen Ping, Hou
Xiaoyuan, Ding Xunmin, Dong Guosheng, Yang Shu, and Wang Xun
Chinese Physics, 6, 755 (1986).
9. The adsorption of water on clean
andoxygen-covered Ag(100) studied by high resolution electron energy loss
spectroscopy.
Xunming Ding,
Eric Garfunkel, Guosheng Dong, Shu Yang, Xiaoyuan Hou, and Xun Wang
J. Vac. Sci. Technol. A4,1468 (1986).
10. A study of the existence of a dihydride phase
on a hydrogen-chemisorbed Si(111) surface.
Hu Jihuang, Liu
Guohui, and Wang Xun
Chinese Physics, 7, 382 (1987).
11. Experimental evidence for indium island
formation on clean InAs(111) and InSb(111) surfaces.
Hou Xiaoyuan, Yu
Mingren, and Wang Xun
Chinese Physics, 7, 854 (1987).
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