国外举行的国际会议和国际系列会议 邀请报告
1. Investigation on atomic and electronic structures of InP polar surfaces.
4th International Conference on Solid Films and Surfaces,
Aug. 23-27, 1987 Hamamatsu , Japan
2.Semiconductor-metal phase transition at Mn/GaAs(100) interface.
21st International Conference on the Physics of Semiconductors,
Aug. 10-14, 1992 Beijing , China
3. Anisotropic infrared up-conversion luminescence and exciton dynamics of light emitting porous silicon.
International Workshop on Light Emission and Electronic Properties of Nanoscale Silicon,
Feb. 1-3, 1993 Charlotte , USA
4. Structure and composition of sulfur passivated GaAs surfaces.
4th International Conference on the Structures of Surfaces,
Aug. 16-19, 1993 Shanghai , China
5. Luminescent behaviors and mechanism of porous silicon.
7th International Workshop on Electroluminescence (EL'94),
Oct. 10-12, 1994 Beijing , China
6. Light-emitting porous silicon--A possible route towards the all-silicon optoelectronic integration.
1995 APS Spring Meeting of the American Physical Society, Physics Without Borders Symposium.
April 18, 1995 Washington D.C. , USA
7. X-ray photoelectron spectroscopic studies of sulfur passivated GaAs surfaces.
Australisia-Asia XPS Symposium 1995,
Nov. 14-17, 1995 Sydney , Australia
8. Silicon-based low dimensional quantum structures.
International Symposium on the Quantum Structures for Photonic Applications.
March 6-8, 1997 Sendai , Japan
9. Scanning probe microscopic studies of semiconductor low dimensional structures.
Asia-Pasic Surface and Interface Analysis Conference.
Nov. 29-Dec.4, 1998 Singapore
国内举办的国际会议 邀请报告
1. Atomic and electronic structures of InP polar surfaces
Asia and Pacific Symposium on Surface Physics,
April 14-17, 1987 Shanghai
2. Silicon based heterojunctions and superlattices.
Workshop on the Physics of Superlattices and Quantum Wells,
Oct. 17-21, 1988 Shanghai
3. Silicon based heterojunctions and superlattices grown by molecular beam epitaxy.
Second International Conference on Solid State and Integrated Circuit Technology
Oct. 23-26, 1989 Beijing
4. Growth and characterization of Ge/Si and GexSi1-x/Si superlattices.
2nd China-Japan Symposium on Thim Films,
Nov. 27-29, 1989 Guangzhou
5. Characterization of germanium-silicon strained-layer superlattices by Raman scattering spectroscopy.
Sino-Soviet Seminar on Spectroscopy and Optoelectronic Devices of Semiconductors and Related Materials,
May 28-30, 1990 Shanghai
6. Fabrication of germanium-silicon strained-layer superlattices by molecular beam epitaxy.
C-MRS-International ‘90 Symposium,
June 18-22, 1990 Beijing
7. Optical properties and device applications of Ge-Si heterojunctions and superlattices.
International Workshop on Spectroscopy and Optoelectronics of Condensed Matters,
Oct. 14-17, 1991 Shanghai
8. Recent advances on luminescence in porous silicon.
94 International Conference on Thin Film Physics and Applications,
April 15-18, 1994 Shanghai
9. Physics and applications of SiGe/Si heterojunctions and superlattices.
Sino-Korea Joint Workshop on Physics and Applications of Semiconductors,
Oct. , 1994 Beijing
10. Physical properties of SiGe quantum wells studied by electrical measurements.
First International Conference on Frontiers of Physics-- Looking to the 21st Centry,
Aug. 5-9, 1995 Shantou
11. Newly developed passivation of GaAs surfaces and devices.
4th International Conference on Solid State and Integrated Circuit Technology,
Oct. 24-28, 1995 Beijing
12. Anisotropic infrared-up-conversion luminescence and exciton dynamics in light-emitting porous silicon
1st Sino-American Workshop on Microstructured Crystals for Nonlinear Optics and Related Fields
April 2-5, 1996 Nanjing
13. Metastable g -phase Mn Thin Films Grown on GaAs(001) Surfaces
3 rd Sino-Korea Joint Symposium on Semiconductor Physics and device Applications
Oct. 7-10, 1996 Guilin
14. X-ray reflectivity measurement of delta-doped impurity profile in silicon molecular beam epitaxial layer.
Sino-Swedish Workshop on the Generation and Use of Synchrotron Radiation
Sept. 28-29, 1998 Shanghai
国外大学作报告
1. Rutgers University , USA 1989
Atomic and Electronic Structures of InP Polar Surfaces
2. Cornell University , USA 1989
Electron Spectroscopical Study of InP Polar Surfaces
3. U.C.Berkeley , USA 1991
SiGe/Si Quantum Wells and Superlattices
4. Lawrence Berkeley Laboratory, USA 1991
Atomic and Electronic Structures of InP Polar Surfaces
5. Hiroshima University, Japan 1992
Light Emitting Porous Silicon
Sulfur Passivation of GaAs Surfaces
6. Vanderbilt University , USA 1993
Recent progress in Light-emitting Porous Silicon
7. Stuttgart University , Germany 1995
Physics and Device Applications of SiGe/Si Quantum Wells
8. Jeonbuk National University , Korea 1995
SiGe/Si QuantumWells and Superlattices
9. Seoul National University 1995
SiGe/Si Quantum Wells and Superlattices
10. City University of Hong Kong 1995
Physics and Device Applications of SiGe/Si Quantum Wells and Superlattices
11. Hong Kong University of Science and Technology 1996
Physical Properties of SiGe/Si Quantum Wells Studied by Electrical Measurements
12. Workshop on the Photoelectron Spectroscopy at the Chinese University of Hong Kong 1996
(1) XPS Studies of Semiconductors
(2) XPS Studies of Metals and Alloys
13. Tohoku University, Japan 1996
(1) Epitaxial Growth of Magnetic Single Crystal Films on GaAs Surfaces
(2) Surface Atomic and Electronic Structures of Semiconductors
(3) Silicon-based Optoelectronic Integration.
14. Tohoku University, Japan 1997
Present Status of Silicon-based Light-emitting Materials and Structures
15. Hong Kong University of Science and Technology 1998
(1) Self-organized Germanium Quantum Dots Grown by Molecular Beam Epitaxy on Si(100).
(2) Coulomb Charging Effect in Ge Quanyum Dots Studied by Admittance Spectroscopy.
16. City University of Hong Kong 1998
Self-assembled Ge Quantum Dots and Their Atomic-like Energy Levels.
17. University of Hong Kong 1998
Self-assembled Ge Quantum Dots and Their Atomic-like Energy Levels.
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