1. J. L. Liu and F. X. Xiu. “ZnO based LEDs and photodetectors based on a reliable p-type doping”UC Case No. 2005-782-1.
  2. J. L. Liu and F. X. Xiu“A method to fabricate high-quality phosphorus-doped p-type ZnO”, UC Case No. 2006-611-1.
  3. Faxian Xiu, Kang L. Wang, Y. Wang, and J. Zou. “Ordered and self-assembled MnxGe1-x nanostructures by MBE”UC Case No. 2009-721.
  4. Faxian Xiu, Kang L. Wang. “Room-temperature Electric Field Controlled Ferromagnetism for Spin FETs”UC Case No. 2009-624.
  5. Kang L. Wang, Ajey P. Jacob, Faxian Xiu. “Spin transistor having multiferroic gate dielectric”US patent published online 2011-09-29. US patent number is 20110233524.