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- J. L. Liu and F. X. Xiu. “ZnO based LEDs and photodetectors based on a reliable p-type doping”, UC Case No. 2005-782-1.
- J. L. Liu and F. X. Xiu. “A method to fabricate high-quality phosphorus-doped p-type ZnO”, UC Case No. 2006-611-1.
- Faxian Xiu, Kang L. Wang, Y. Wang, and J. Zou. “Ordered and self-assembled MnxGe1-x nanostructures by MBE”, UC Case No. 2009-721.
- Faxian Xiu, Kang L. Wang. “Room-temperature Electric Field Controlled Ferromagnetism for Spin FETs”, UC Case No. 2009-624.
- Kang L. Wang, Ajey P. Jacob, Faxian Xiu. “Spin transistor having multiferroic gate dielectric”, US patent published online 2011-09-29. US patent number is 20110233524.